Philips BYX10G Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYX10G
Rectifier
Product specification
File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors Product specification
Rectifier BYX10G
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
ka
• Excellent stability
• Available in ammo-pack.
2/3 page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RWM
I
F(AV)
non-repetitive peak reverse voltage − 1600
repetitive peak reverse voltage − 1600 V
crest working reverse voltage − 800 V
average forward current Ttp=50°C;
− 1.2 A
V
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
=60°C; PCB mounting
T
amb
− 0.6 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
T
T
stg
j
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
VR=V
prior to surge;
j max
RWMmax
− 25 A
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 May 24 2
Philips Semiconductors Product specification
Rectifier BYX10G
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
t
rr
forward voltage
reverse current
reverse recovery time
= 2 A; Tj=T
I
F
I
= 2 A; see Fig.6
F
V
R=VRWMmax
V
R=VRWMmax
j max;
; see Fig.7
; Tj= 150 °C; see Fig.7
when switched from I
see Fig.6
=0.5AtoIR=1A;
F
measured at IR= 0.25 A; see Fig.10
C
d
diode capacitance
= 0 V; f = 1 MHz; see Fig.8
V
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
−−1.5 V
−−1.5 V
−−1µA
−−200 µA
− 3 −
− 30 −
µs
pF
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 May 24 3
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