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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D183
BYX105G to BYX108G
High-voltage soft-recovery
controlled avalanche rectifiers
Preliminary specification
Supersedes data of 1996 May 24
File under Discrete Semiconductors, SC01
1996 Oct 03
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Philips Semiconductors Preliminary specification
High-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Recovery times ranging from
600 to 50 ns
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
• High-voltage power supply units in,
for example, X-ray or radar
systems.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
MARKING
BYX105G black
BYX106G red
BYX107G green
BYX108G violet
BYX105G to BYX108G
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
See also the chapter on custom made
high-voltage rectifiers in the
Part of Handbook SC01”
handbook, halfpage
Fig.1 Simplified outline (SOD88A) and symbol.
TYPE NUMBER CATHODE BAND
ak
MSB026
“General
.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RW
I
F(AV)
repetitive peak reverse voltage − 5kV
working reverse voltage − 4.5 kV
average forward current averaged over any 20 ms period;
T
=25°C
BYX105G − 650 mA
oil
BYX106G − 575 mA
BYX107G − 480 mA
BYX108G − 340 mA
I
F(AV)
average forward current averaged over any 20 ms period;
T
=70°C
BYX105G − 460 mA
oil
BYX106G − 400 mA
BYX107G − 340 mA
BYX108G − 240 mA
I
FSM
non-repetitive peak forward current t = 10 ms; half sinewave;
BYX105G − 20 A
Tj=45°C prior to surge
BYX106G − 15 A
BYX107G − 14 A
BYX108G − 14 A
1996 Oct 03 2