DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D183
BYX101G to BYX104G
High-voltage soft-recovery
controlled avalanche rectifiers
Preliminary specification
Supersedes data of 1996 May 24
File under Discrete Semiconductors, SC01
1996 Oct 03
Philips Semiconductors Preliminary specification
High-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Recovery times ranging from
600 to 50 ns
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
• High-voltage power supply units in,
for example, X-ray or radar
systems.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
MARKING
BYX101G black
BYX102G red
BYX103G green
BYX104G violet
BYX101G to BYX104G
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
See also the chapter on custom made
high-voltage rectifiers in the
Part of Handbook SC01”
handbook, halfpage
Fig.1 Simplified outline (SOD88A) and symbol.
TYPE NUMBER CATHODE BAND
ak
MSB026
“General
.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RW
I
F(AV)
repetitive peak reverse voltage − 10 kV
working reverse voltage − 9kV
average forward current averaged over any 20 ms period;
T
=25°C
BYX101G − 400 mA
oil
BYX102G − 360 mA
BYX103G − 310 mA
BYX104G − 225 mA
I
F(AV)
average forward current averaged over any 20 ms period;
T
=70°C
BYX101G − 285 mA
oil
BYX102G − 255 mA
BYX103G − 220 mA
BYX104G − 160 mA
I
FSM
non-repetitive peak forward current t = 10 ms; half sinewave;
BYX101G − 20 A
Tj=45°C prior to surge
BYX102G − 15 A
BYX103G − 14 A
BYX104G − 14 A
1996 Oct 03 2