Philips byw97 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D118

BYW97 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Jun 07

1996 Sep 18

Philips Semiconductors Product specification

Fast soft-recovery

BYW97 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYW97F − 1200 V
BYW97G − 1400 V

V

R

continuous reverse voltage

BYW97F − 1200 V
BYW97G − 1400 V

I

F(AV)

I

F(AV)

I

FRM

I

FSM

E

RSM

average forward current Ttp=50°C; lead length = 10 mm

average forward current T

repetitive peak forward current Ttp=50°C; see Fig.4 − 33 A

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

T

stg

T

j

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

DESCRIPTION

Rugged glass package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.

ka

2/3 page (Datasheet)

MAM104

Fig.1 Simplified outline (SOD64) and symbol.

− 3.3 A
see Fig.2;
averaged over any 20 ms period;
see also Fig.6

=55°C; PCB mounting (see

amb

− 1.3 A
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

T

=55°C; see Fig.5 − 13 A

amb

− 60 A
Tj=T
VR=V

L = 120 mH; Tj=T

prior to surge;

j max

RRMmax

j max

prior to

− 10 mJ
surge; inductive load switched off

1996 Sep 18 2

Philips Semiconductors Product specification

Fast soft-recovery

BYW97 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 5 A; Tj=T

I

= 5 A; see Fig.8 −−1.45 V

F

reverse avalanche

IR= 0.1 mA

; see Fig.8 −−1.25 V

j max

breakdown voltage

BYW97F 1300 −−V
BYW97G 1500 −−V

reverse current VR=V

RRMmax

;

−−1µA

see Fig.9
V

R=VRRMmax

; Tj= 165 °C;

−−150 µA

see Fig.9

reverse recovery time when switched from IF= 0.5 A

−−500 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.12

diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 − 65 − pF
maximum slope of

reverse recovery current

when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;

= 1 A to

F

−−5A/µs

see Fig.13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

“General Part of associated Handbook”

.

1996 Sep 18 3