Philips BYW96D-20, BYW96D, BYW96E-40, BYW96E-33, BYW96E-21 Datasheet
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DATA SH EET
Product specification
Supersedes data of April 1982
1996 Jun 07
DISCRETE SEMICONDUCTORS
BYW96 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D118
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYW96D − 800 V
BYW96E − 1000 V
V
R
continuous reverse voltage
BYW96D − 800 V
BYW96E − 1000 V
I
F(AV)
average forward current Ttp=50°C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
− 3A
I
F(AV)
average forward current T
amb
=55°C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
− 1.25 A
I
FRM
repetitive peak forward current Ttp=50°C; see Fig.4 − 30 A
T
amb
=55°C; see Fig.5 − 13 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 70 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Fig.7 −65 +175 °C
1996 Jun 07 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW96 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 5 A; Tj=T
j max
; see Fig.8 −−1.25 V
I
F
= 5 A; see Fig.8 −−1.50 V
V
(BR)R
reverse avalanche
breakdown voltage
IR= 0.1 mA
BYW96D 900 −−V
BYW96E 1100 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.9
−−1µA
V
R=VRRMmax
; Tj= 165 °C;
see Fig.9
−−150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A
to IR= 1 A; measured at
IR= 0.25 A; see Fig.12
−−300 ns
C
d
diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 − 75 − pF
maximum slope of
reverse recovery current
when switched from I
F
= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.13
−−6A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
dI
R
dt
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