Philips BYW96D-20, BYW96D, BYW96E-40, BYW96E-33, BYW96E-21 Datasheet

DATA SH EET

Product specification

Supersedes data of April 1982

1996 Jun 07

DISCRETE SEMICONDUCTORS

BYW96 series

Fast soft-recovery

controlled avalanche rectifiers

handbook, 2 columns

M3D118

1996 Jun 07 2

Philips Semiconductors Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYW96 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package,

using a high temperature alloyed

construction. This package is

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYW96D − 800 V

BYW96E − 1000 V

V

R

continuous reverse voltage

BYW96D − 800 V

BYW96E − 1000 V

I

F(AV)

average forward current T

tp

=50°C; lead length = 10 mm

see Fig.2;

averaged over any 20 ms period;

see also Fig.6

− 3A

I

F(AV)

average forward current T

amb

=55°C; PCB mounting (see

Fig.11); see Fig.3;

averaged over any 20 ms period;

see also Fig.6

− 1.25 A

I

FRM

repetitive peak forward current T

tp

=50°C; see Fig.4 − 30 A

T

amb

=55°C; see Fig.5 − 13 A

I

FSM

non-repetitive peak forward current t = 10 ms half sine wave;

T

j

=T

j max

prior to surge;

V

R

=V

RRMmax

− 70 A

E

RSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; T

j

=T

j max

prior to

surge; inductive load switched off

− 10 mJ

T

stg

storage temperature −65 +175 °C

T

j

junction temperature see Fig.7 −65 +175 °C

1996 Jun 07 3

Philips Semiconductors Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYW96 series

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.

For more information please refer to the

“General Part of associated Handbook”

.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage I

F

= 5 A; T

j

=T

j max

; see Fig.8 −−1.25 V

I

F

= 5 A; see Fig.8 −−1.50 V

V

(BR)R

reverse avalanche

breakdown voltage

I

R

= 0.1 mA

BYW96D 900 −−V

BYW96E 1100 −−V

I

R

reverse current V

R

=V

RRMmax

;

see Fig.9

−−1µA

V

R

=V

RRMmax

; T

j

= 165 °C;

see Fig.9

−−150 µA

t

rr

reverse recovery time when switched from I

F

= 0.5 A

to I

R

= 1 A; measured at

I

R

= 0.25 A; see Fig.12

−−300 ns

C

d

diode capacitance f = 1 MHz; V

R

= 0 V; see Fig.10 − 75 − pF

maximum slope of

reverse recovery current

when switched from I

F

= 1 A to

V

R

≥ 30 V and dI

F

/dt = −1A/µs;

see Fig.13

−−6A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W

R

th j-a

thermal resistance from junction to ambient note 1 75 K/W

dI

R

dt

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