Philips BYW95C-40, BYW95C-24, BYW95C-20, BYW95B-33, BYW95B-30 Datasheet

DATA SH EET

Product specification
Supersedes data of December 1979

1996 Jun 07

DISCRETE SEMICONDUCTORS

BYW95 series

Fast soft-recovery
controlled avalanche rectifiers

handbook, 2 columns

M3D118

1996 Jun 07 2

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYW95 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package,
using a high temperature alloyed

construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYW95A − 200 V
BYW95B − 400 V
BYW95C − 600 V

V

R

continuous reverse voltage

BYW95A − 200 V
BYW95B − 400 V
BYW95C − 600 V

I

F(AV)

average forward current Ttp=60°C; lead length = 10 mm

see Fig.2;
averaged over any 20 ms period;
see also Fig.6

− 3.00 A

T

amb

=65°C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

− 1.25 A

I

FRM

repetitive peak forward current Ttp=60°C; see Fig.4 − 30 A

T

amb

=65°C; see Fig.5 − 13 A

I

FSM

non-repetitive peak forward current t = 10 ms half sine wave;

Tj=T

j max

prior to surge;

VR=V

RRMmax

− 70 A

E

RSM

non-repetitive peak reverse
avalanche energy

L = 120 mH; Tj=T

j max

prior to

surge; inductive load switched off

− 10 mJ

T

stg

storage temperature −65 +175 °C

T

j

junction temperature see Fig.7 −65 +175 °C

1996 Jun 07 3

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYW95 series

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

“General Part of associated Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 5 A; Tj=T

j max

; see Fig.8 −−1.25 V

I

F

= 5 A; see Fig.8 −−1.50 V

V

(BR)R

reverse avalanche
breakdown voltage

IR= 0.1 mA

BYW95A 300 −−V
BYW95B 500 −−V
BYW95C 700 −−V

I

R

reverse current VR=V

RRMmax

;

see Fig.9

−−1µA

V

R=VRRMmax

; Tj= 165 °C;

see Fig.9

−−150 µA

t

rr

reverse recovery time when switched from IF= 0.5 A

to IR= 1 A; measured at
IR= 0.25 A; see Fig.12

−−250 ns

C

d

diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 − 85 − pF
maximum slope of

reverse recovery current

when switched from I

F

= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.13

−−7A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W

R

th j-a

thermal resistance from junction to ambient note 1 75 K/W

dI

R

dt

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