Philips BYW95C, BYW95B, BYW95A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D118

BYW95 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of December 1979
File under Discrete Semiconductors, SC01

1996 Jun 07

Philips Semiconductors Product specification

Fast soft-recovery

BYW95 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

DESCRIPTION

Rugged glass SOD64 package,
using a high temperature alloyed

temperature

• Low leakage current

• Excellent stability

ka

2/3 page (Datasheet)

• Guaranteed avalanche energy
absorption capability

• Available in ammo-pack

• Also available with preformed leads

Fig.1 Simplified outline (SOD64) and symbol.

for easy insertion.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYW95A − 200 V
BYW95B − 400 V
BYW95C − 600 V

V

R

continuous reverse voltage

BYW95A − 200 V
BYW95B − 400 V
BYW95C − 600 V

I

F(AV)

average forward current Ttp=60°C; lead length = 10 mm

see Fig.2;
averaged over any 20 ms period;
see also Fig.6

T

=65°C; PCB mounting (see

amb

Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

I

FRM

I

FSM

E

T
T

RSM

stg
j

repetitive peak forward current Ttp=60°C; see Fig.4 − 30 A

T

=65°C; see Fig.5 − 13 A

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

MAM104

− 3.00 A

− 1.25 A

− 70 A

prior to

− 10 mJ

1996 Jun 07 2

Philips Semiconductors Product specification

Fast soft-recovery

BYW95 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 5 A; Tj=T

I

= 5 A; see Fig.8 −−1.50 V

F

reverse avalanche

IR= 0.1 mA

breakdown voltage

BYW95A 300 −−V
BYW95B 500 −−V
BYW95C 700 −−V

reverse current VR=V

RRMmax

see Fig.9
V

R=VRRMmax

see Fig.9

reverse recovery time when switched from IF= 0.5 A

to IR= 1 A; measured at

IR= 0.25 A; see Fig.12
diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 − 85 − pF
maximum slope of

reverse recovery current

when switched from I

VR≥ 30 V and dIF/dt = −1A/µs;

see Fig.13

; see Fig.8 −−1.25 V

j max

;

; Tj= 165 °C;

−−1µA

−−150 µA

−−250 ns

= 1 A to

F

−−7A/µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

‘General Part of Handbook SC01.’

1996 Jun 07 3