Philips byw600 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D333
BYW28 series
Ultra fast low-loss
controlled avalanche rectifier
Product specification
File under Discrete Semiconductors, SC01
1997 Nov 26
Philips Semiconductors Product specification
Ultra fast low-loss
BYW28 series
controlled avalanche rectifier
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD115 package,
using a high temperature alloyed
construction.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability.
handbook, halfpage
ka
Fig.1 Simplified outline (SOD115) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYW28-500 − 500 V
BYW28-600 − 600 V
V
R
continuous reverse voltage
BYW28-500 − 500 V
BYW28-600 − 600 V
I
F(AV)
average forward current Ttp=85°C; lead length = 10 mm;
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
=60°C; printed-circuit board
T
amb
mounting (see Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
I
FRM
I
FSM
E
T
T
RSM
stg
j
repetitive peak forward current Ttp=85°C; see Fig.4 − 46 A
T
=60°C; see Fig.5 − 21 A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
The package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
MAM384
− 4A
− 1.7 A
− 170 A
prior to
− 20 mJ
1997 Nov 26 2
Philips Semiconductors Product specification
Ultra fast low-loss
BYW28 series
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
forward voltage IF= 3.5 A; Tj=T
I
= 3.5 A; see Fig.8 −−1.15 V
F
reverse avalanche
IR= 0.1 mA
; see Fig.8 −−0.90 V
j max
breakdown voltage
BYW28-500 560 −−V
BYW28-600 675 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.9 −− 5µA
RRMmax
; Tj= 165 °C;
−−150 µA
see Fig.9
reverse recovery time when switched from IF= 0.5 A
−−50 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.12
diode capacitance f = 1 MHz; VR= 0; see Fig.10 − 275 − pF
maximum slope of reverse
recovery current
when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;
= 1 A to
F
−− 4A/µs
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 20 K/W
thermal resistance from junction to ambient note 1 70 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
‘General Part of Handbook SC01’
.
1997 Nov 26 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifier
GRAPHICAL DATA
handbook, halfpage
8
I
F(AV)
(A)
6
4
2
0
0 200
40 80 120 160
a =1.42; VR=V
Switched mode application.
RRMmax
; δ = 0.5.
MBK237
Ttp (°C)
handbook, halfpage
3
I
F(AV)
(A)
2
1
0
0 200
a = 1.42; VR=V
Device mounted as shown in Fig.11.
Switched mode application.
40 80 120 160
; δ = 0.5.
RRMmax
BYW28 series
MBK236
T
(°C)
amb
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
50
handbook, full pagewidth
I
FRM
(A)
40
30
20
10
0
−2
10
δ = 0.05
0.1
0.2
0.5
1
−1
10
11010
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGL262
2103
tp (ms)
10
4
Ttp=85°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 20 K/W.
j max
at V
RRM=VRRMmax
.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 26 4
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