Philips BYW55, BYW54 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYW54 to BYW56
Controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 11
File under Discrete Semiconductors, SC01
1996 Oct 03
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYW54 to BYW56
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
ka
2/3 page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYW54 − 600 V
BYW55 − 800 V
BYW56 − 1000 V
V
RWM
crest working reverse voltage
BYW54 − 600 V
BYW55 − 800 V
BYW56 − 1000 V
V
R
continuous reverse voltage
BYW54 − 600 V
BYW55 − 800 V
BYW56 − 1000 V
I
F(AV)
average forward current Ttp=45°C;
− 2.0 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
=80°C; PCB mounting
amb
− 0.8 A
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
I
FSM
E
T
T
RSM
stg
j
non-repetitive peak forward current t = 10 ms half sinewave − 50 A
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 20
mJ
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 Oct 03 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYW54 to BYW56
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltage
reverse avalanche
= 1 A; Tj=T
I
F
I
= 1 A; see Fig.6
F
IR= 0.1 mA
; see Fig.6
j max
breakdown voltage
BYW54 650 −−V
BYW55 900 −−V
BYW56 1100 −−V
reverse current
V
R=VRRMmax
V
R=VRRMmax
; see Fig.7
; Tj= 165 °C;
see Fig.7
reverse recovery time
when switched from I
= 0.5 A to
F
IR= 1 A; measured at IR= 0.25 A;
see Fig.10
diode capacitance
= 0 V; f = 1 MHz; see Fig.8
V
R
−− 0.8 V
−− 1.0 V
−− 1µA
−−150 µA
− 3 −
− 50 −
µs
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 Oct 03 3
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