Philips BYW29F-200, BYW29F-150, BYW29F-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYW29F series
ultrafast
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rectifier diodes in full pack, plastic
envelopes, featuring low forward BYW29F- 100 150 200
voltage drop, ultra-fast recovery V
RRM
times and soft recovery voltage
characteristic. They are intended for V
useinswitchedmode powersupplies I
andhighfrequency circuits ingeneral t
where low conduction and switching
F
F(AV)
rr
losses are essential.
PINNING - SOD100 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
Repetitive peak reverse 100 150 200 V
Forward voltage 0.895 0.895 0.895 V
Forward current 8 8 8 A
Reverse recovery time 25 25 25 ns
case
ka
case isolated
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
V
RRM
V
RWM
V
R
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2t I2t for fusing t = 10 ms - 32 A2s
T
stg
T
j
Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage
Average forward current
1
2
square wave; δ = 0.5; - 8 A
- 100 150 200 V
Ths ≤ 106 ˚C
sinusoidal; a = 1.57; - 7.3 A
Ths ≤ 109 ˚C
RMS forward current - 11.3 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 109 ˚C
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied
V
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 Ths ≤ 141˚C for thermal stability.
2 Neglecting switching and reverse current losses
October 1994 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYW29F series
ultrafast
ISOLATION
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree - - 1500 V
both terminals to external
heatsink
Capacitance from cathode to f = 1 MHz - 12 - pF
external heatsink
Thermal resistance junction to with heatsink compound - - 5.5 K/W
mounting base without heatsink compound - - 7.2 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
Forward voltage IF = 8 A; Tj = 150˚C - 0.80 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
Reverse current VR = V
VR = V
; Tj = 100 ˚C - 0.3 0.6 mA
RWM
RWM
- 2 10 µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr
I
rrm
V
fr
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 4 11 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C; - 1 2 A
-dIF/dt = 50 A/µs
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs - 1 - V
October 1994 2 Rev 1.100
Loading...