Philips BYW29F Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYW29F series
ultrafast
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rectifier diodes in full pack, plastic
envelopes, featuring low forward BYW29F- 100 150 200
voltage drop, ultra-fast recovery V
RRM
Repetitive peak reverse 100 150 200 V
times and soft recovery voltage
characteristic. They are intended for V
F
Forward voltage 0.895 0.895 0.895 V
useinswitchedmode power supplies I
F(AV)
Forward current 8 8 8 A
andhighfrequency circuits in general t
rr
Reverse recovery time 25 25 25 ns
where low conduction and switching
losses are essential.
PINNING - SOD100 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
V
RRM
Repetitive peak reverse voltage - 100 150 200 V
V
RWM
Crest working reverse voltage - 100 150 200 V
V
R
Continuous reverse voltage
1
- 100 150 200 V
I
F(AV)
Average forward current
2
square wave; δ = 0.5; - 8 A
Ths ≤ 106 ˚C
sinusoidal; a = 1.57; - 7.3 A
Ths ≤ 109 ˚C
I
F(RMS)
RMS forward current - 11.3 A
I
FRM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 109 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied
V
RWM(max)
I2t I2t for fusing t = 10 ms - 32 A2s
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
1 2
case
ka
1 Ths ≤ 141˚C for thermal stability.
2 Neglecting switching and reverse current losses
October 1994 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYW29F series
ultrafast
ISOLATION
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree - - 1500 V
both terminals to external
heatsink
C
isol
Capacitance from cathode to f = 1 MHz - 12 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.5 K/W
mounting base without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air - 55 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 8 A; Tj = 150˚C - 0.80 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
I
R
Reverse current VR = V
RWM
; Tj = 100 ˚C - 0.3 0.6 mA
VR = V
RWM
- 2 10 µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 4 11 nC
t
rr
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
I
rrm
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C; - 1 2 A
-dIF/dt = 50 A/µs
V
fr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs - 1 - V
October 1994 2 Rev 1.100
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