Philips BYW29EX-150, BYW29EX-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated epitaxial rectifier SYMBOL PARAMETER MAX. MAX. UNIT
diodes in a full pack plastic envelope,
featuring low forward voltage drop, BYW29EX- 150 200
ultra-fast recovery times, soft recovery V
RRM
Repetitive peak reverse 150 200 V
characteristic and guaranteed reverse voltage
surge and ESD capability. They are V
F
Forward voltage 0.895 0.895 V
intendedforuseinswitchedmodepower I
F(AV)
Forward current 8 8 A
supplies and high frequency circuits in t
rr
Reverse recovery time 25 25 ns
general where low conduction and I
RRM
Repetitive peak reverse 0.2 0.2 A
switching losses are essential. current
PINNING - SOD113 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-150 -200
V
RRM
Repetitive peak reverse voltage - 150 200 V
V
RWM
Crest working reverse voltage - 150 200 V
V
R
Continuous reverse voltage - 150 200 V
I
F(AV)
Average forward current
1
square wave; δ = 0.5;
Ths ≤ 106 ˚C - 8 A
sinusoidal; a = 1.57;
Ths ≤ 109 ˚C - 7.3 A
I
F(RMS)
RMS forward current - 11.3 A
I
FRM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 106 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied
V
RWM(max)
I2tI
2
t for fusing t = 10 ms - 32 A2s
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
I
RSM
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
12
case
k a
12
1 Neglecting switching and reverse current losses
October 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air - 55 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 8 A; Tj = 150˚C - 0.80 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
I
R
Reverse current VR = V
RWM
; Tj = 100 ˚C - 0.2 0.6 mA
VR = V
RWM
-210µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC
t
rr1
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
t
rr2
Reverse recovery time IF = 0.5 A to IR = 1 A; I
rec
= 0.25 A - 15 20 ns
V
fr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.200
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