Philips byw29ex DATASHEETS

Philips Semiconductors Product specification
Rectifier diodes BYW29EX series ultrafast, rugged

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated epitaxial rectifier SYMBOL PARAMETER MAX. MAX. UNIT diodes in a full pack plastic envelope, featuring low forward voltage drop, BYW29EX- 150 200 ultra-fast recovery times, soft recovery V
characteristic and guaranteed reverse voltage surge and ESD capability. They are V intendedforuseinswitchedmodepower I supplies and high frequency circuits in t general where low conduction and I switching losses are essential. current
F F(AV) rr RRM

PINNING - SOD113 PIN CONFIGURATION SYMBOL

Repetitive peak reverse 150 200 V Forward voltage 0.895 0.895 V
Forward current 8 8 A Reverse recovery time 25 25 ns Repetitive peak reverse 0.2 0.2 A
PIN DESCRIPTION
case
1 cathode 2 anode
k a 12
case isolated
12

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-150 -200
V
V
RWM
V
R
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2tI I
I
RSM
T
stg
T
j
Repetitive peak reverse voltage - 150 200 V Crest working reverse voltage - 150 200 V Continuous reverse voltage - 150 200 V
Average forward current
1
square wave; δ = 0.5; Ths 106 ˚C - 8 A sinusoidal; a = 1.57;
Ths 109 ˚C - 7.3 A RMS forward current - 11.3 A Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Ths 106 ˚C Non-repetitive peak forward t = 10 ms - 80 A current t = 8.3 ms - 88 A
sinusoidal; with reapplied
V
2
t for fusing t = 10 ms - 32 A2s
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A Non-repetitive peak reverse tp = 100 µs - 0.2 A current Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
1 Neglecting switching and reverse current losses
October 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series ultrafast, rugged

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V both terminals to external waveform; heatsink R.H. 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz - 10 - pF to external heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.5 K/W heatsink without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air - 55 - K/W ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Forward voltage IF = 8 A; Tj = 150˚C - 0.80 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V Reverse current VR = V
VR = V
; Tj = 100 ˚C - 0.2 0.6 mA
RWM RWM
-210µA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr1
t
rr2
V
fr
October 1998 2 Rev 1.200
Reverse recovery charge IF = 2 A; VR 30 V; -dIF/dt = 20 A/µs- 4 11 nC Reverse recovery time IF = 1 A; VR 30 V; - 20 25 ns
-dIF/dt = 100 A/µs Reverse recovery time IF = 0.5 A to IR = 1 A; I Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
= 0.25 A - 15 20 ns
rec
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