Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance I
F(AV)
= 8 A
• Low thermal resistance
I
RRM
= 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Ultra-fast,epitaxialrectifierdiodes intendedfor useasoutputrectifiers inhighfrequencyswitchedmode powersupplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING SOT404 SOT428
PIN DESCRIPTION
1 no connection
2 cathode
1
3 anode
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYW29EB/ BYW29ED -150 -200
V
RRM
Peak repetitive reverse - 150 200 V
voltage
V
RWM
Working peak reverse - 150 200 V
voltage
V
R
Continuous reverse voltage - 150 200 V
I
F(AV)
Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
I
FSM
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
I
RSM
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 40 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k a
tab 3
123
tab
13
tab
2
November 1998 1 Rev 1.300