Philips byw29e DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance I
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
k a
12
= 8 A
F(AV)
I
≤ 0.2 A
RRM
trr ≤ 25 ns
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
tab
in high frequency switched mode 1 cathode
power supplies.
2 anode
The BYW29E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 150 200 V
voltage
Working peak reverse - 150 200 V
voltage
Continuous reverse voltage - 150 200 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied V
Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current
Operating junction - 150 ˚C
temperature
Storage temperature - 40 150 ˚C
BYW29E -150 -200
RRM(max)
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
November 1998 1 Rev 1.300
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
rr
t
rr1
t
rr2
V
fr
Thermal resistance junction - - 2.7 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient
Forward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
Reverse current VR = V
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-411nC
VR = V
RWM
; Tj = 100˚C - 0.2 0.6 mA
RWM
-210µA
Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs2025ns
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
= 0.25 A - 15 20 ns
rec
November 1998 2 Rev 1.300
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