Philips BYV99 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV99

Ultra fast low-loss
controlled avalanche rectifier

Product specification
Supersedes data of May 1993

1996 Feb 19

Philips Semiconductors Product specification

Ultra fast low-loss

BYV99

controlled avalanche rectifier

FEATURES

• Glass passivated

• Low leakage current

• Excellent stability

DESCRIPTION

Rugged glass SOD57 package, using
a high temperature alloyed
construction.

• Guaranteed avalanche energy
absorption capability

• Available in ammo-pack.

ka

2/3 page (Datasheet)

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F(AV)

repetitive peak reverse voltage − 600 V
continuous reverse voltage − 600 V
average forward current Ttp=50°C; lead length = 10 mm

see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6

T

=60°C; PCB mounting (see

amb

Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6

I

FRM

I

FSM

E

RSM

T

stg

T

j

repetitive peak forward current Ttp=50°C; see Fig. 4 − 9A

T

=60°C; see Fig. 5 − 5A

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

storage temperature −65 +175 °C
junction temperature −65 +150 °C

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM047

− 1.00 A

− 0.55 A

− 20 A

prior to

− 10 mJ

1996 Feb 19 2

Philips Semiconductors Product specification

Ultra fast low-loss

BYV99

controlled avalanche rectifier

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 1 A; Tj=T

I

= 1 A; see Fig. 7 −−2.7 V

F

reverse avalanche

IR= 0.1 mA 700 −−V

; see Fig. 7 −−1.5 V

j max

breakdown voltage
reverse current VR=V

RRMmax

;

−− 5µA

see Fig. 8
V

R=VRRMmax

; Tj= 150 °C;

−−75 µA

see Fig. 8

reverse recovery time when switched from IF= 0.5 A

−−15 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12

diode capacitance f = 1 MHz; VR= 0 V; see Fig. 9 − 75 − pF
maximum slope of reverse

recovery current

when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;

= 1 A to

F

−− 3A/µs

see Fig.11

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.10.
For more information please refer to the

“General Part of associated Handbook”

.

1996 Feb 19 3