Philips BYV98 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV98
Fast soft-recovery rectifier
Product specification
Supersedes data of May 1993
File under Discrete Semiconductors, SC01
1996 Jun 07
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYV98
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
temperature
• Low leakage current
• Excellent stability
ka
• Available in ammo-pack.
2/3 page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
I
F(AV)
non-repetitive peak reverse voltage − 2100 V
repetitive peak reverse voltage − 2000 V
average forward current Ttp=55°C; lead length = 10 mm
− 1.00 A
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
I
F(AV)
average forward current T
=60°C; PCB mounting (see
amb
− 0.43 A
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
I
FRM
I
FSM
T
T
stg
j
repetitive peak forward current Ttp=55°C; see Fig. 4 − 9.0 A
=60°C; see Fig. 5 − 4.5 A
T
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
VR=V
prior to surge;
j max
RRMmax
− 15 A
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYV98
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
I
t
C
F
R
rr
dI
-------dt
d
R
forward voltage IF= 2 A; Tj=T
= 2 A; see Fig. 8 −−2.4 V
I
F
reverse current VR=V
RRMmax
V
R=VRRMmax
; see Fig. 8 −−2.2 V
j max
; see Fig. 9 −−5µA
; Tj= 125 °C;
−−50 µA
see Fig. 9
reverse recovery time when switched from IF= 0.5 A
−−300 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12
diode capacitance f = 1 MHz; VR= 0 V; see Fig 10 − 30 − pF
maximum slope of
reverse recovery current
when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;
= 1 A to
F
−−5A/µs
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 07 3
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