Philips BYV97G Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV97 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
1996 Jun 07
Philips Semiconductors Product specification
Fast soft-recovery
BYV97 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV97F − 1200 V
BYV97G − 1400 V
V
R
continuous reverse voltage
BYV97F − 1200 V
BYV97G − 1400 V
I
F(AV)
I
F(AV)
I
FRM
I
FSM
E
RSM
average forward current Ttp=60°C; lead length = 10 mm
average forward current T
repetitive peak forward current Ttp=65°C; see Fig.4 − 15 A
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
T
stg
T
j
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
DESCRIPTION
Rugged glass SOD57 package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.
ka
2/3 page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
− 1.6 A
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
=50°C; PCB mounting
amb
− 0.9 A
(see Fig. 12); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
T
=65°C; see Fig.5 − 8A
amb
− 20 A
Tj=T
VR=V
L = 120 mH; Tj=T
prior to surge;
j max
RRMmax
j max
prior to
− 10 mJ
surge; inductive load switched off
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery
BYV97 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
forward voltage IF= 3 A; Tj=T
I
= 3 A; see Fig.8 −−1.65 V
F
reverse avalanche
IR= 0.1 mA
; see Fig.8 1.35 V
j max
breakdown voltage
BYV97F 1300 −−V
BYV97G 1500 −−V
reverse current VR=V
RRMmax
;
−− 1µA
see Fig.9
V
R=VRRMmax
; Tj= 165 °C;
−−150 µA
see Fig.9
reverse recovery time when switched from IF= 0.5 A
−−500 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.14
diode capacitance f = 1 MHz; VR= 0 V; see Fig.11 − 35 − pF
maximum slope of
reverse recovery current
when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;
= 1 A to
F
−− 5A/µs
see Figs 10 and 13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 12.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 07 3
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