Philips BYV96E-UN, BYV96E-EB Datasheet
DATA SH EET
Product specification
Supersedes data of April 1982
1996 Jun 07
DISCRETE SEMICONDUCTORS
BYV96 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D116
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV96 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction. This
package is hermetically sealed and fatigue free as coefficients of expansion
of all used parts are matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV96D − 800 V
BYV96E − 1000 V
V
R
continuous reverse voltage
BYV96D − 800 V
BYV96E − 1000 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm
see Fig 2;
averaged over any 20 ms period;
see also Fig 6
− 1.5 A
T
amb
=55°C; PCB mounting (see
Fig.11); see Fig 3;
averaged over any 20 ms period;
see also Fig 6
− 0.8 A
I
FRM
repetitive peak forward current Ttp=55°C; see Fig 4 − 17 A
T
amb
=55°C; see Fig 5 − 9A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 35 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Fig 7 −65 +175 °C
1996 Jun 07 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV96 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 3 A; Tj=T
j max
; see Fig 8 −−1.35 V
I
F
= 3 A; see Fig 8 −−1.60 V
V
(BR)R
reverse avalanche
breakdown voltage
IR= 0.1 mA
BYV96D 900 −−V
BYV96E 1100 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig 9
−−1µA
V
R=VRRMmax
; Tj= 165 °C;
see Fig 9
−−150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A
to IR= 1 A; measured at
IR= 0.25 A; see Fig 12
−−300 ns
C
d
diode capacitance f = 1 MHz; VR= 0 V; see Fig 10 − 40 − pF
maximum slope of
reverse recovery current
when switched from I
F
= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.13
−−6A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
dI
R
dt
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