Philips BYV95C, BYV95B, BYV95A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV95 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of April 1982
File under Discrete Semiconductors, SC01

1996 Jun 07

Philips Semiconductors Product specification

Fast soft-recovery

BYV95 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is

• Low leakage current

• Excellent stability

ka

• Guaranteed avalanche energy

2/3 page (Datasheet)

absorption capability

• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYV95A − 200 V
BYV95B − 400 V
BYV95C − 600 V

V

R

continuous reverse voltage

BYV95A − 200 V
BYV95B − 400 V
BYV95C − 600 V

I

F(AV)

average forward current Ttp=65°C; lead length = 10 mm

see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6

T

=65°C; PCB mounting (see

amb

Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6

I

FRM

I

FSM

E

RSM

T

stg

T

j

repetitive peak forward current Ttp=65°C; see Fig. 4 − 17 A

=65°C; see Fig. 5 − 9A

T

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

storage temperature −65 +175 °C
junction temperature see Fig. 7 −65 +175 °C

hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

MAM047

− 1.5 A

− 0.8 A

− 35 A

prior to

− 10 mJ

1996 Jun 07 2

Philips Semiconductors Product specification

Fast soft-recovery

BYV95 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 3 A; Tj=T

= 3 A; see Fig. 8 −−1.60 V

I

F

reverse avalanche

IR= 0.1 mA

; see Fig. 8 −−1.35 V

j max

breakdown voltage

BYV95A 300 −−V
BYV95B 500 −−V
BYV95C 700 −−V

reverse current VR=V

RRMmax

;

−−1µA

see Fig. 9
V

R=VRRMmax

; Tj= 165 °C;

−−150 µA

see Fig. 9

reverse recovery time when switched from IF= 0.5 A

−−250 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12

diode capacitance f = 1 MHz; VR= 0 V; see Fig. 10 − 45 − pF
maximum slope of

reverse recovery current

when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;

= 1 A to

F

−−7A/µs

see Fig.13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

‘General Part of Handbook SC01’

.

1996 Jun 07 3