Philips BYV95C, BYV95B, BYV95A Datasheet
DISCRETE SEMICONDUCTORS
M3D116
DATA SH EET
handbook, 2 columns
BYV95 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1982
File under Discrete Semiconductors, SC01
1996 Jun 07
Philips Semiconductors Product specification
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
k a
Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV95A − 200 V
BYV95B − 400 V
BYV95C − 600 V
V
R
continuous reverse voltage
BYV95A − 200 V
BYV95B − 400 V
BYV95C − 600 V
I
F(AV)
average forward current Ttp= 65 °C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
T
= 65 °C; PCB mounting (see
amb
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
I
FRM
I
FSM
E
T
T
RSM
stg
j
repetitive peak forward current Ttp= 65 °C; see Fig. 4 − 17 A
T
= 65 °C; see Fig. 5 − 9 A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj= T
VR= V
L = 120 mH; Tj= T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
storage temperature −65 +175 °C
junction temperature see Fig. 7 −65 +175 °C
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
− 1.5 A
− 0.8 A
− 35 A
prior to
− 10 mJ
1996 Jun 07 2
Philips Semiconductors Product specification
-
Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
Tj= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
t
C
R
rr
dI
-------
F
(BR)R
d
R
dt
forward voltage IF= 3 A; Tj= T
; see Fig. 8 − − 1.35 V
j max
IF= 3 A; see Fig. 8 − − 1.60 V
reverse avalanche
IR= 0.1 mA
breakdown voltage
BYV95A 300 − − V
BYV95B 500 − − V
BYV95C 700 − − V
reverse current VR= V
RRMmax
;
− − 1 µA
see Fig. 9
VR= V
RRMmax
; Tj= 165 °C;
− − 150 µA
see Fig. 9
reverse recovery time when switched from IF= 0.5 A
− − 250 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12
diode capacitance f = 1 MHz; VR= 0 V; see Fig. 10 − 45 − pF
maximum slope of
reverse recovery current
when switched from IF= 1 A to
VR≥ 30 V and dIF/dt = −1 A/µs;
− − 7 A/µs
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 07 3
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