Philips BYV36C, BYV36B, BYV36A, BYV36G, BYV36F Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV36 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 May 30
File under Discrete Semiconductors, SC01

1996 Jul 01

Philips Semiconductors Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

DESCRIPTION

Rugged glass SOD57 package,
using a high temperature alloyed

temperature

• Low leakage current

• Excellent stability

ka

• Guaranteed avalanche energy

2/3 page (Datasheet)

absorption capability

• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYV36A − 200 V
BYV36B − 400 V
BYV36C − 600 V
BYV36D − 800 V
BYV36E − 1000 V
BYV36F − 1200 V
BYV36G − 1400 V

V

R

continuous reverse voltage

BYV36A − 200 V
BYV36B − 400 V
BYV36C − 600 V
BYV36D − 800 V
BYV36E − 1000 V
BYV36F − 1200 V
BYV36G − 1400 V

I

F(AV)

average forward current Ttp=60°C; lead length = 10 mm;

BYV36A to C − 1.6 A
BYV36D and E − 1.5 A

see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16

BYV36F and G − 1.5 A

I

F(AV)

average forward current T

BYV36A to C − 0.87 A
BYV36D and E − 0.81 A

=60°C; PCB mounting (see

amb

Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16

BYV36F and G − 0.81 A

construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

MAM047

1996 Jul 01 2

Philips Semiconductors Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

FRM

I

FRM

I

FSM

E

RSM

T

stg

T

j

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

repetitive peak forward current Ttp=60°C; see Figs 8; 9 and 10

BYV36A to C − 18 A
BYV36D and E − 17 A
BYV36F and G − 15 A

repetitive peak forward current T

=60°C; see Figs 11;12and13

amb

BYV36A to C − 9A
BYV36D and E − 8A
BYV36F and G − 8A

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

non-repetitive peak reverse
avalanche energy

prior to surge; VR=V
L = 120 mH; Tj=T

inductive load switched off

RRMmax

prior to surge;

j max

j max

− 30 A

− 10 mJ

storage temperature −65 +175 °C
junction temperature see Figs 17 and 18 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 1 A; Tj=T

BYV36A to C −−1.00 V

see Figs 19; 20 and 21

j max

;

BYV36D and E −−1.05 V
BYV36F and G −−1.05 V

V

F

forward voltage IF=1A;

BYV36A to C −−1.35 V

see Figs 19; 20 and 21

BYV36D and E −−1.45 V
BYV36F and G −−1.45 V

V

(BR)R

reverse avalanche breakdown

IR= 0.1 mA

voltage

BYV36A 300 −−V
BYV36B 500 −−V
BYV36C 700 −−V
BYV36D 900 −−V
BYV36E 1100 −−V
BYV36F 1300 −−V
BYV36G 1500 −−V

I

R

reverse current VR=V

V

R=VRRMmax

; see Fig.22 −− 5µA

RRMmax

;

−−150 µA

Tj= 165 °C; see Fig.22

1996 Jul 01 3

Philips Semiconductors Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

rr

C

d

dI

R

-------­dt

THERMAL CHARACTERISTICS

reverse recovery time when switched from

BYV36A to C −−100 ns
BYV36D and E −−150 ns
BYV36F and G −−250 ns

diode capacitance f = 1 MHz; VR=0V;

BYV36A to C − 45 − pF
BYV36D and E − 40 − pF
BYV36F and G − 35 − pF

maximum slope of reverse recovery
current

BYV36A to C −− 7A/µs
BYV36D and E −− 6A/µs
BYV36F and G −− 5A/µs

IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 26

see Figs 23 and 24

when switched from
I

= 1 A to VR≥ 30 V and

F

dIF/dt = −1A/µs;
see Fig.27

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W

‘General Part of Handbook SC01’

.

1996 Jul 01 4

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

GRAPHICAL DATA

1.6

I

F(AV)

(A)

1.2
20 15 10 lead length (mm)

0.8

0.4

0

0 200

BYV36A toC

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

100

o

Ttp( C)

MSA867

1.6

I

F(AV)

(A)

1.2

0.8

0.4

0

0 200

BYV36D andE

a =1.42; VR=V
Switched mode application.

20 15 10 lead length (mm)

100

; δ= 0.5.

RRMmax

BYV36 series

MSA866

o

Ttp( C)

Fig.2 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV36F andG

a =1.42; VR=V
Switched mode application.

RRMmax

lead length 10 mm

; δ= 0.5.

100

o

T ( C)

tp

MBD419

Fig.3 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

1.2

handbook, halfpage

I

F(AV)

(A)

0.8

0.4

0

0 200

BYV36A toC

a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.

RRMmax

; δ= 0.5.

100

T ( C)

amb

MSA865

o

Fig.4 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

1996 Jul 01 5

Fig.5 Maximum average forward current as a

function of ambient temperature (including
losses due to reverse leakage).