Philips BYV36C, BYV36B, BYV36A, BYV36G, BYV36F Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D116

BYV36 series

Fast soft-recovery

controlled avalanche rectifiers

Product specification

1996 Jul 01

Supersedes data of 1996 May 30

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙Available in ammo-pack.

	DESCRIPTION	construction. This package is
	Rugged glass SOD57 package,	hermetically sealed and fatigue free
		as coefficients of expansion of all
	using a high temperature alloyed
		used parts are matched.

k

a

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	BYV36A		−	200	V
	BYV36B		−	400	V
	BYV36C		−	600	V
	BYV36D		−	800	V
	BYV36E		−	1000	V
	BYV36F		−	1200	V
	BYV36G		−	1400	V
VR	continuous reverse voltage
	BYV36A		−	200	V
	BYV36B		−	400	V
	BYV36C		−	600	V
	BYV36D		−	800	V
	BYV36E		−	1000	V
	BYV36F		−	1200	V
	BYV36G		−	1400	V
IF(AV)	average forward current	Ttp = 60 °C; lead length = 10 mm;
	BYV36A to C	see Figs 2; 3 and 4	−	1.6	A
	BYV36D and E	averaged over any 20 ms period;	−	1.5	A
		see also Figs 14; 15 and 16
	BYV36F and G		−	1.5	A
IF(AV)	average forward current	Tamb = 60 °C; PCB mounting (see
	BYV36A to C	Fig.25); see Figs 5; 6 and 7	−	0.87	A
	BYV36D and E	averaged over any 20 ms period;	−	0.81	A
		see also Figs 14; 15 and 16
	BYV36F and G		−	0.81	A

1996 Jul 01

2

Philips Semiconductors	Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
IFRM	repetitive peak forward current	Ttp = 60 °C; see Figs 8; 9 and 10
	BYV36A to C		−	18	A
	BYV36D and E		−	17	A
	BYV36F and G		−	15	A
IFRM	repetitive peak forward current	Tamb = 60 °C; see Figs 11; 12 and 13
	BYV36A to C		−	9	A
	BYV36D and E		−	8	A
	BYV36F and G		−	8	A
IFSM	non-repetitive peak forward current	t = 10 ms half sine wave; Tj = Tj max	−	30	A
		prior to surge; VR = VRRMmax
ERSM	non-repetitive peak reverse	L = 120 mH; Tj = Tj max prior to surge;	−	10	mJ
	avalanche energy	inductive load switched off
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature	see Figs 17 and 18	−65	+175	°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VF	forward voltage	IF = 1 A; Tj = Tj max;
	BYV36A to C	see Figs 19; 20 and 21	−	−	1.00	V
	BYV36D and E		−	−	1.05	V
	BYV36F and G		−	−	1.05	V
VF	forward voltage	IF = 1 A;
	BYV36A to C	see Figs 19; 20 and 21	−	−	1.35	V
	BYV36D and E		−	−	1.45	V
	BYV36F and G		−	−	1.45	V
V(BR)R	reverse avalanche breakdown	IR = 0.1 mA
	voltage
	BYV36A		300	−	−	V
	BYV36B		500	−	−	V
	BYV36C		700	−	−	V
	BYV36D		900	−	−	V
	BYV36E		1100	−	−	V
	BYV36F		1300	−	−	V
	BYV36G		1500	−	−	V
IR	reverse current	VR = VRRMmax; see Fig.22	−	−	5	μA
		VR = VRRMmax;	−	−	150	μA
		Tj = 165 °C; see Fig.22

1996 Jul 01

3

Philips Semiconductors	Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

trr

reverse recovery time

when switched from

BYV36A to C

IF = 0.5 A to IR = 1 A;

-

-

100

ns

BYV36D and E

measured at IR = 0.25 A;

-

-

150

ns

see Fig. 26

BYV36F and G

-

-

250

ns

Cd

diode capacitance

f = 1 MHz; VR = 0 V;

BYV36A to C

see Figs 23 and 24

-

45

-

pF

BYV36D and E

-

40

-

pF

BYV36F and G

-

35

-

pF

dIR

maximum slope of reverse recovery

when switched from

--------

current

IF = 1 A to VR ³ 30 V and

dt

dIF/dt = -1 A/ms;

-

-

A/ms

BYV36A to C

7

see Fig.27

BYV36D and E

-

-

6

A/ms

BYV36F and G

-

-

5

A/ms

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

46

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

Note

1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.25. For more information please refer to the ‘General Part of Handbook SC01’.

1996 Jul 01

4

Philips Semiconductors	Product specification

Fast soft-recovery

BYV36 series

controlled avalanche rectifiers

GRAPHICAL DATA

MSA867

1.6

IF(AV)

(A)

1.2

20 15

10

lead length (mm)

0.8

0.4

0

0	100	T tp	(	o	C)	200

BYV36A to C

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MSA866

1.6

IF(AV)

(A)

1.2

20

15

10

lead length (mm)

0.8

0.4
0
		100			o
0			T tp	(		C)	200
BYV36D and E
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.3		Maximum average forward current as a

function of tie-point temperature (including losses due to reverse leakage).

MBD419

2.0 handbook, halfpage

IF(AV)

(A)

1.6

	lead length 10 mm
1.2
0.8
0.4
0
0	100	T	(oC)	200
		tp

BYV36F and G

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.4 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MSA865

1.2 handbook, halfpage

IF(AV)

(A)

0.8

0.4

0

0	100	Tamb (	o	C)	200

BYV36A to C

a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25.

Switched mode application.

Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).

1996 Jul 01

5