Philips byv36 DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D116
BYV36 series
Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of 1996 May 30
1996 Jul 01
Philips Semiconductors Product specification
Fast soft-recovery
BYV36 series
controlled avalanche rectifiers

FEATURES

Glass passivated
High maximum operating

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed
temperature
Low leakage current
Excellent stability
ka
Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
Available in ammo-pack. Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV36A 200 V BYV36B 400 V BYV36C 600 V BYV36D 800 V BYV36E 1000 V BYV36F 1200 V BYV36G 1400 V
V
R
continuous reverse voltage
BYV36A 200 V BYV36B 400 V BYV36C 600 V BYV36D 800 V BYV36E 1000 V BYV36F 1200 V BYV36G 1400 V
I
F(AV)
average forward current Ttp=60°C; lead length = 10 mm;
BYV36A to C 1.6 A BYV36D and E 1.5 A
see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16
BYV36F and G 1.5 A
I
F(AV)
average forward current T
BYV36A to C 0.87 A BYV36D and E 0.81 A
=60°C; PCB mounting (see
amb
Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16
BYV36F and G 0.81 A
construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
MAM047
1996 Jul 01 2
Philips Semiconductors Product specification
Fast soft-recovery
BYV36 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.
T
j
repetitive peak forward current Ttp=60°C; see Figs 8; 9 and 10
BYV36A to C 18 A BYV36D and E 17 A BYV36F and G 15 A
repetitive peak forward current T
=60°C; see Figs 11;12and13
amb
BYV36A to C 9A BYV36D and E 8A BYV36F and G 8A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse avalanche energy
prior to surge; VR=V L = 120 mH; Tj=T
inductive load switched off
RRMmax
prior to surge;
j max
j max
30 A
10 mJ
storage temperature 65 +175 °C junction temperature see Figs 17 and 18 65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
BYV36A to C −−1.00 V
see Figs 19; 20 and 21
j max
;
BYV36D and E −−1.05 V BYV36F and G −−1.05 V
V
F
forward voltage IF=1A;
BYV36A to C −−1.35 V
see Figs 19; 20 and 21
BYV36D and E −−1.45 V BYV36F and G −−1.45 V
V
(BR)R
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYV36A 300 −−V BYV36B 500 −−V BYV36C 700 −−V BYV36D 900 −−V BYV36E 1100 −−V BYV36F 1300 −−V BYV36G 1500 −−V
I
R
reverse current VR=V
V
R=VRRMmax
; see Fig.22 −− 5µA
RRMmax
;
−−150 µA
Tj= 165 °C; see Fig.22
1996 Jul 01 3
Philips Semiconductors Product specification
Fast soft-recovery
BYV36 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
C
d
dI
R
-------­dt

THERMAL CHARACTERISTICS

reverse recovery time when switched from
BYV36A to C −−100 ns BYV36D and E −−150 ns BYV36F and G −−250 ns
diode capacitance f = 1 MHz; VR=0V;
BYV36A to C 45 pF BYV36D and E 40 pF BYV36F and G 35 pF
maximum slope of reverse recovery current
BYV36A to C −− 7A/µs BYV36D and E −− 6A/µs BYV36F and G −− 5A/µs
IF= 0.5 A to IR=1A; measured at IR= 0.25 A; see Fig. 26
see Figs 23 and 24
when switched from I
= 1 A to VR≥ 30 V and
F
dIF/dt = 1A/µs; see Fig.27
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.25. For more information please refer to the
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W thermal resistance from junction to ambient note 1 100 K/W
“General Part of associated Handbook”
.
1996 Jul 01 4
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers

GRAPHICAL DATA

1.6
I
F(AV)
(A)
1.2 20 15 10 lead length (mm)
0.8
0.4
0
0 200
BYV36A toC
a =1.42; VR=V Switched mode application.
RRMmax
; δ= 0.5.
100
o
Ttp( C)
MSA867
1.6
I
F(AV)
(A)
1.2
0.8
0.4
0
0 200
BYV36D andE
a =1.42; VR=V Switched mode application.
20 15 10 lead length (mm)
100
; δ= 0.5.
RRMmax
BYV36 series
MSA866
o
Ttp( C)
Fig.2 Maximum average forward current as a
function of tie-point temperature (including losses due to reverse leakage).
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYV36F andG
a =1.42; VR=V Switched mode application.
RRMmax
lead length 10 mm
; δ= 0.5.
100
o
T ( C)
tp
MBD419
Fig.3 Maximum average forward current as a
function of tie-point temperature (including losses due to reverse leakage).
1.2
handbook, halfpage
I
F(AV)
(A)
0.8
0.4
0
0 200
BYV36A toC
a =1.42; VR=V Device mounted as shown in Fig.25. Switched mode application.
RRMmax
; δ= 0.5.
100
T ( C)
amb
MSA865
o
Fig.4 Maximum average forward current as a
function of tie-point temperature (including losses due to reverse leakage).
1996 Jul 01 5
Fig.5 Maximum average forward current as a
function of ambient temperature (including losses due to reverse leakage).
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