Philips BYV34-500, BYV34-400, BYV34-300 Datasheet
Philips Semiconductors Product specification
Dual rectifier diodes BYV34 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Soft recovery characteristic V
• High thermal cycling performance
a1
13
a2
• Low thermal resistance I
k
2
= 300 V/ 400 V/ 500 V
R
≤ 1.05 V
F
= 20 A
O(AV)
trr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
Dual, common cathode, ultra-fast, PIN DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high 1 anode 1
frequency switched mode power
supplies. 2 cathode
TheBYV34series issupplied in the 3 anode 2
conventional leaded SOT78
(TO220AB) package. tab cathode
tab
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
O(AV)
I
FRM
I
FSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 300 400 500 V
Crest working reverse voltage - 300 400 500 V
Continuous reverse voltage Tmb ≤ 138˚C - 300 400 500 V
Average rectified output current square wave; δ = 0.5; - 20 A
(both diodes conducting)
1
Tmb ≤ 115 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode Tmb ≤ 115 ˚C
Non-repetitive peak forward t = 10 ms - 120 A
current per diode. t = 8.3 ms - 132 A
sinusoidal; with reapplied
V
RRM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
BYV34 -300 -400 -500
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Neglecting switching and reverse current losses
October 1998 1 Rev 1.400
Thermal resistance junction to per diode - - 2.4 K/W
heatsink both diodes conducting - - 1.6 K/W
Thermal resistance junction to in free air. - 60 - K/W
ambient
Philips Semiconductors Product specification
Dual rectifier diodes BYV34 series
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
Forward voltage IF = 10 A; Tj = 150˚C - 0.87 1.05 V
IF = 20 A - 1.10 1.35 V
Reverse current VR = V
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 50 60 nC
VR = V
RRM
; Tj = 100 ˚C - 0.2 0.6 mA
RRM
-1050µA
dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.0 A
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
4
BYV34
0.2
IF(AV) / A
BYV34
2.8
0.5
2.2
I
F(AV)
Tmb(max) / C
p
t
T
=I
F(RMS)
Tmb(max) / C
1.9
D = 1.0
D =
x √D.
a = 1.57
p
t
T
t
F(AV)
102
114
126
138
150
) per
121.1
126
130.8
135.6
140.4
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10%
Fig.1. Definition of trr, Qs and I
100%
rrm
PF / W
20
Vo = 0.9400 V
Rs = 0.0100 Ohms
15
10
0.1
5
0
0 5 10 15
Fig.3. Maximum forward dissipation PF = f(I
diode; square wave where I
I
F
time
V
F
12
10
8
6
4
PF / W
conduction
angle
degrees
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
Vo = 0.94 V
Rs = 0.01 Ohms
Fig.2. Definition of V
V
fr
V
F
time
fr
2
0
0246810
IF(AV) / A
Fig.4. Maximum forward dissipation PF = f(I
F(AV)
145.2
150
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998 2 Rev 1.400
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