Philips BYV29X-600 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV29X-600
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 600V
R
• Fast switching
• Soft recovery characteristic V
• High thermal cycling performance
• Low thermal resistance I
k a
12
F(peak)
≤ 1.03 V
F
= 7 A
trr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOD113 (SOT186a)
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in high frequency switched mode 1 cathode
power supplies.
2 anode
The BYV29X-600 is supplied in the
conventional leaded SOD113 tab isolated
(SOT186a) package.
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 600 V
Crest working reverse voltage - 600 V
Continuous reverse voltage - 600 V
Average forward current
1
square wave; δ = 0.5; - 9 A
Tmb ≤ 100 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 18 A
Tmb ≤ 100 ˚C
Non-repetitive peak forward t = 10 ms - 70 A
current. t = 8.3 ms - 77 A
sinusoidal; with reapplied
V
Storage temperature -40 150 ˚C
RRM(max)
Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Neglecting switching and reverse current losses.
February 2000 1 Rev 1.100
Thermal resistance junction to - - 5.5 K/W
heat sink
Thermal resistance junction to in free air. - 60 - K/W
ambient
Philips Semiconductors Product specification
Rectifier diodes BYV29X-600
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.30 1.45 V
Reverse current VR = V
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 70 nC
VR = V
RRM
; Tj = 100 ˚C - 0.1 0.35 mA
RRM
- 2.0 50 µA
dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 3.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 3.2 - V
February 2000 2 Rev 1.100
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