Philips BYV29F-500 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV29F series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 300 V/ 400 V/ 500 V
R
• Fast switching
• Soft recovery characteristic V
• High thermal cycling performance
• Isolated mounting tab I
k a
12
≤ 1.03 V
F
= 9 A
F(AV)
trr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOD100
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in high frequency switched mode 1 cathode
case
power supplies.
2 anode
The BYV29F series is supplied in
the conventional leaded SOD100 tab isolated
package.
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F(AV)
I
FSM
T
T
RRM
R
stg
j
Peak repetitive reverse voltage - 300 400 500 V
Continuous reverse voltage Ths ≤ 138˚C - 300 400 500 V
Average forward current
1
square wave; δ = 0.5; - 9 A
Ths ≤ 90 ˚C
Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; with reapplied
V
RRM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
BYV29F -300 -400 -500
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
1 Neglecting switching and reverse current losses
September 1998 1 Rev 1.300
Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree - 1500 V
both terminals to external
heatsink
Capacitance from cathode to f = 1 MHz - 12 - pF
external heatsink
Philips Semiconductors Product specification
Rectifier diodes BYV29F series
ultrafast
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Thermal resistance junction to in free air. - 55 - K/W
ambient
Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V
Reverse current VR = V
VR = V
RRM
; Tj = 100 ˚C - 0.1 0.35 mA
RRM
- 2.0 50 µA
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
September 1998 2 Rev 1.300
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