Philips BYV29Xseries, BYV29F Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic V
F
≤ 1.03 V
• High thermal cycling performance
• Isolated mounting tab I
F(AV)
= 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode (k)
2 anode (a)
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV29F/BYV29X -300 -400 -500
V
RRM
Peak repetitive reverse voltage - 300 400 500 V
V
R
Continuous reverse voltage Ths ≤ 138˚C
1
- 300 400 500 V
I
F(AV)
Average forward current
2
square wave; δ = 0.5; - 9 A
Ths ≤ 90 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
k a
12
12
case
12
case
1 Ths de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999 1 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air. - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V
I
R
Reverse current VR = V
RRM
- 2.0 50 µA
VR = V
RRM
; Tj = 100 ˚C - 0.1 0.35 mA
Q
s
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
dIF/dt = 20 A/µs
t
rr
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
I
rrm
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
V
fr
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
February 1999 2 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.1. Definition of trr, Qs and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation PF = f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x √D.
Fig.4. Maximum forward dissipation PF = f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Fig.6. Maximum I
rrm
at Tj = 25˚C and 100˚C.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0246810
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W
Ths(max) / C
150
139
128
117
106
95
84
time
time
V
F
V
fr
V
F
I
F
1
10
trr / ns
110
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100C
0 5 10 15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
122.5
95
67.5
10
1
0.1
0.01
Irrm / A
1
10 100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100C
February 1999 3 Rev 1.400
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