Philips byv29 DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 300 V/ 400 V/ 500 V
R
• Fast switching
• Soft recovery characteristic V
• High thermal cycling performance
• Low thermal resistance I
k a
12
≤ 1.03 V
F
= 9 A
F(AV)
trr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in high frequency switched mode 1 cathode
power supplies.
2 anode
TheBYV29seriesissupplied inthe
conventional leaded SOD59 tab cathode
(TO220AC) package.
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 300 400 500 V
Crest working reverse voltage - 300 400 500 V
Continuous reverse voltage - 300 400 500 V
Average forward current
1
square wave; δ = 0.5; - 9 A
Tmb ≤ 123 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 18 A
Tmb ≤ 123 ˚C
Non-repetitive peak forward t = 10 ms - 100 A
current. t = 8.3 ms - 110 A
sinusoidal; with reapplied
V
RRM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
BYV29 -300 -400 -500
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.300
Thermal resistance junction to - - 2.5 K/W
mounting base
Thermal resistance junction to in free air. - 60 - K/W
ambient
Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V
Reverse current VR = V
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
VR = V
RRM
; Tj = 100 ˚C - 0.1 0.35 mA
RRM
- 2.0 50 µA
dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
=I
Tmb(max) / C
t
p
T
F(RMS)
Tmb(max) / C
1.9
D = 1.0
D =
x √D.
a = 1.57
112.5
125
137.5
t
p
T
t
150
);
F(AV)
120
125
130
135
140
PF / W
15
Vo = 0.8900 V
Rs = 0.0190 Ohms
10
0.1
5
0
0 5 10 15
Fig.3. Maximum forward dissipation PF = f(I
square wave where I
PF / W
12
Vo = 0.89V
Rs = 0.019 Ohms
10
8
6
4
I
rrm
dI
F
dt
t
rr
time
Q
s
10%
100%
rrm
I
F
I
R
Fig.1. Definition of trr, Qs and I
I
F
time
V
F
BYV29
0.5
0.2
I
IF(AV) / A
F(AV)
BYV29
2.2
2.8
4
Fig.2. Definition of V
V
fr
V
F
time
fr
2
0
0246810
IF(AV) / A
Fig.4. Maximum forward dissipation PF = f(I
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
F(AV)
145
150
);
September 1998 2 Rev 1.300
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