Philips BYV28-400-40, BYV28-400-20, BYV28-300, BYV28-200-24, BYV28-200-20 Datasheet

DATA SH EET

Product specification
Supersedes data of 1996 Oct 02

1997 Nov 24

DISCRETE SEMICONDUCTORS

BYV28 series

Ultra fast low-loss
controlled avalanche rectifiers

handbook, 2 columns

M3D118

1997 Nov 24 2

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYV28 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed
construction.

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYV28-50 − 50 V
BYV28-100 − 100 V
BYV28-150 − 150 V
BYV28-200 − 200 V
BYV28-300 − 300 V
BYV28-400 − 400 V
BYV28-500 − 500 V
BYV28-600 − 600 V

V

R

continuous reverse voltage

BYV28-50 − 50 V
BYV28-100 − 100 V
BYV28-150 − 150 V
BYV28-200 − 200 V
BYV28-300 − 300 V
BYV28-400 − 400 V
BYV28-500 − 500 V
BYV28-600 − 600 V

I

F(AV)

average forward current Ttp=85°C; lead length = 10 mm;

see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11

BYV28-50 to 400 − 3.5 A
BYV28-500 and 600 − 3.1 A

I

F(AV)

average forward current T

amb

=60°C; printed-circuit board
mounting (see Fig.20);
see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11

BYV28-50 to 400 − 1.9 A
BYV28-500 and 600 − 1.5 A

1997 Nov 24 3

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYV28 series

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

I

FRM

repetitive peak forward current Ttp=85°C; see Figs 6 and 7

BYV28-50 to 400 − 32 A
BYV28-500 and 600 − 31 A

I

FRM

repetitive peak forward current T

amb

=60°C; see Figs 8 and 9

BYV28-50 to 400 − 17 A
BYV28-500 and 600 − 16 A

I

FSM

non-repetitive peak forward current t = 10 ms half sine wave;

Tj=T

j max

prior to surge;

VR=V

RRMmax

− 90 A

E

RSM

non-repetitive peak reverse
avalanche energy

L = 120 mH; Tj=T

j max

prior to

surge; inductive load switched off

− 20 mJ

T

stg

storage temperature −65 +175 °C

T

j

junction temperature see Fig.12 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 3.5 A; Tj=T

j max

;

see Figs 13, 14 and 15

BYV28-50 to 200 −−0.80 V
BYV28-300 and 400 −−0.83 V
BYV28-500 and 600 −−0.98 V

V

F

forward voltage IF= 3.5 A;

see Figs 13, 14 and 15

BYV28-50 to 200 −−1.02 V
BYV28-300 and 400 −−1.05 V
BYV28-500 and 600 −−1.25 V

V

(BR)R

reverse avalanche breakdown
voltage

IR= 0.1 mA

BYV28-50 55 −−V
BYV28-100 110 −−V
BYV28-150 165 −−V
BYV28-200 220 −−V
BYV28-300 330 −−V
BYV28-400 440 −−V
BYV28-500 560 −−V
BYV28-600 675 −−V

I

R

reverse current VR=V

RRMmax

; see Fig.16 −− 5µA

V

R=VRRMmax

; Tj= 165 °C;

see Fig.16

−−150 µA

t

rr

reverse recovery time when switched from

IF=0.5AtoIR=1A;
measured at IR= 0.25 A;
see Fig.22

BYV28-50 to 200 −−25 ns
BYV28-300 to 600 −−50 ns

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1997 Nov 24 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYV28 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20
For more information please refer to the

“General Part of associated Handbook”

.

C

d

diode capacitance f = 1 MHz; VR=0;

see Figs 17, 18 and 19

BYV28-50 to 200 − 190 − pF
BYV28-300 and 400 − 150 − pF
BYV28-500 and 600 − 125 − pF

maximum slope of reverse
recovery current

when switched from
I

F

=1AtoVR≥30 V and

dIF/dt = −1A/µs; see Fig.21

−− 4A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W

R

th j-a

thermal resistance from junction to ambient note 1 75 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dI

R

dt

--------

1997 Nov 24 5

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYV28 series

GRAPHICAL DATA

BYV28-50 to 400

a = 1.42; VR=V

RRMmax

; δ = 0.5.

Switched mode application.

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

0 200

4

0

2

3

MGA868

100

I

F(AV)

(A)

T ( C)

o

tp

1

20 15 10 lead length (mm)

Fig.3 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

BYV28-500 and 600

a = 1.42; VR=V

RRMmax

; δ = 0.5.

Switched mode application.

handbook, halfpage

0 200

5

0

1

2

3

4

I

F(AV)

(A)

100

Ttp (°C)

MGK640

lead length 10 mm

BYV28-50 to 400

a = 1.42; VR=V

RRMmax

; δ = 0.5; switched mode application.

Device mounted as shown in Fig.20.

Fig.4 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

handbook, halfpage

0 200

0

1

3

MLC206

100

I

F(AV)

(A)

T ( C)

o

2

amb

BYV28-500 and 600

a = 1.42; VR=V

RRMmax

; δ = 0.5; switched mode application.

Device mounted as shown in Fig.20.

Fig.5 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

handbook, halfpage

0 200

2.0

0

0.4

0.8

1.2

1.6

I

F(AV)

(A)

100

T

amb

(°C)

MGK641