Philips byv28 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D118

BYV28 series

Ultra fast low-loss
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Oct 02

1997 Nov 24

Philips Semiconductors Product specification

Ultra fast low-loss

BYV28 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed
construction.

• Low leakage current

• Excellent stability

ka

• Guaranteed avalanche energy

2/3 page (Datasheet)

absorption capability

• Available in ammo-pack

• Also available with preformed leads

Fig.1 Simplified outline (SOD64) and symbol.

for easy insertion.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYV28-50 − 50 V
BYV28-100 − 100 V
BYV28-150 − 150 V
BYV28-200 − 200 V
BYV28-300 − 300 V
BYV28-400 − 400 V
BYV28-500 − 500 V
BYV28-600 − 600 V

V

R

continuous reverse voltage

BYV28-50 − 50 V
BYV28-100 − 100 V
BYV28-150 − 150 V
BYV28-200 − 200 V
BYV28-300 − 300 V
BYV28-400 − 400 V
BYV28-500 − 500 V
BYV28-600 − 600 V

I

F(AV)

I

F(AV)

average forward current Ttp=85°C; lead length = 10 mm;

BYV28-50 to 400 − 3.5 A
BYV28-500 and 600 − 3.1 A

average forward current T

BYV28-50 to 400 − 1.9 A
BYV28-500 and 600 − 1.5 A

see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11

=60°C; printed-circuit board

amb

mounting (see Fig.20);
see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM104

1997 Nov 24 2

Philips Semiconductors Product specification

Ultra fast low-loss

BYV28 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

FRM

I

FRM

I

FSM

E

RSM

T

stg

T

j

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

repetitive peak forward current Ttp=85°C; see Figs 6 and 7

BYV28-50 to 400 − 32 A
BYV28-500 and 600 − 31 A

repetitive peak forward current T

=60°C; see Figs 8 and 9

amb

BYV28-50 to 400 − 17 A
BYV28-500 and 600 − 16 A

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

prior to

− 90 A

− 20 mJ

storage temperature −65 +175 °C
junction temperature see Fig.12 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 3.5 A; Tj=T

BYV28-50 to 200 −−0.80 V

see Figs 13, 14 and 15

j max

;

BYV28-300 and 400 −−0.83 V
BYV28-500 and 600 −−0.98 V

V

F

forward voltage IF= 3.5 A;

BYV28-50 to 200 −−1.02 V

see Figs 13, 14 and 15

BYV28-300 and 400 −−1.05 V
BYV28-500 and 600 −−1.25 V

V

(BR)R

reverse avalanche breakdown

IR= 0.1 mA

voltage

BYV28-50 55 −−V
BYV28-100 110 −−V
BYV28-150 165 −−V
BYV28-200 220 −−V
BYV28-300 330 −−V
BYV28-400 440 −−V
BYV28-500 560 −−V
BYV28-600 675 −−V

I

R

reverse current VR=V

V

R=VRRMmax

; see Fig.16 −− 5µA

RRMmax

; Tj= 165 °C;

−−150 µA

see Fig.16

t

rr

reverse recovery time when switched from

BYV28-50 to 200 −−25 ns
BYV28-300 to 600 −−50 ns

IF=0.5AtoIR=1A;
measured at IR= 0.25 A;
see Fig.22

1997 Nov 24 3

Philips Semiconductors Product specification

Ultra fast low-loss

BYV28 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

d

dI

R

-------­dt

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20
For more information please refer to the

diode capacitance f = 1 MHz; VR=0;

BYV28-50 to 200 − 190 − pF
BYV28-300 and 400 − 150 − pF
BYV28-500 and 600 − 125 − pF

maximum slope of reverse
recovery current

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W

see Figs 17, 18 and 19

when switched from
I

=1AtoVR≥30 V and

F

dIF/dt = −1A/µs; see Fig.21

−− 4A/µs

“General Part of associated Handbook”

.

1997 Nov 24 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

4

I

F(AV)

(A)

3

2

1

0

0 200

BYV28-50 to 400

a = 1.42; VR=V
Switched mode application.

20 15 10 lead length (mm)

100

; δ = 0.5.

RRMmax

o

T ( C)

tp

MGA868

handbook, halfpage

5

I

F(AV)

(A)

4

3

2

1

0

0 200

BYV28-500 and 600

a = 1.42; VR=V
Switched mode application.

RRMmax

lead length 10 mm

100

; δ = 0.5.

BYV28 series

MGK640

Ttp (°C)

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

3

I

F(AV)

(A)

2

1

0

0 200

BYV28-50 to 400

a = 1.42; VR=V
Device mounted as shown in Fig.20.

; δ = 0.5; switched mode application.

RRMmax

100

o

T ( C)

amb

MLC206

Fig.3 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV28-500 and 600

a = 1.42; VR=V
Device mounted as shown in Fig.20.

; δ = 0.5; switched mode application.

RRMmax

100

T

amb

MGK641

(°C)

Fig.4 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

1997 Nov 24 5

Fig.5 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).