Philips BYV27-600, BYV27-500, BYV27-50, BYV27-400, BYV27-300 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV27 series

Ultra fast low-loss
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Oct 02
File under Discrete Semiconductors, SC01

1997 Nov 24

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD57 package, using
a high temperature alloyed
construction.

• Low leakage current

• Excellent stability

ka

• Guaranteed avalanche energy

2/3 page (Datasheet)

absorption capability

• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYV27-50 − 50 V
BYV27-100 − 100 V
BYV27-150 − 150 V
BYV27-200 − 200 V
BYV27-300 − 300 V
BYV27-400 − 400 V
BYV27-500 − 500 V
BYV27-600 − 600 V

V

R

continuous reverse voltage

BYV27-50 − 50 V
BYV27-100 − 100 V
BYV27-150 − 150 V
BYV27-200 − 200 V
BYV27-300 − 300 V
BYV27-400 − 400 V
BYV27-500 − 500 V
BYV27-600 − 600 V

I

F(AV)

average forward current Ttp=85°C; lead length = 10 mm;

BYV27-50 to 200 − 2.0 A
BYV27-300 and 400 − 1.9 A

see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16

BYV27-500 and 600 − 1.6 A

I

F(AV)

average forward current T

BYV27-50 to 200 − 1.30 A
BYV27-300 and 400 − 1.25 A
BYV27-500 and 600 − 1.10 A

=60°C; printed-circuit board

amb

mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM047

1997 Nov 24 2

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

FRM

I

FRM

I

FSM

E

RSM

T

stg

T

j

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

repetitive peak forward current Ttp=85°C; see Figs 8, 9 and 10

BYV27-50 to 400 − 20 A
BYV27-500 and 600 − 16 A

repetitive peak forward current T

BYV27-50 to 200 − 14 A

=60°C;

amb

see Figs 11, 12 and 13

BYV27-300 and 400 − 13 A
BYV27-500 and 600 − 11 A

non-repetitive peak forward current t = 10 ms half sine wave;

BYV27-50 to 400 − 50 A
BYV27-500 and 600 − 40 A

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

prior to

− 20 mJ

storage temperature −65 +175 °C
junction temperature see Fig. 17 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 2 A; Tj=T

BYV27-50 to 200 −−0.78 V

see Figs 18, 19 and 20

j max

;

BYV27-300 and 400 −−0.82 V
BYV27-500 and 600 −−1.00 V

V

F

forward voltage IF=2A;

BYV27-50 to 200 −−0.98 V

see Figs 18, 19 and 20

BYV27-300 and 400 −−1.05 V
BYV27-500 and 600 −−1.25 V

V

(BR)R

reverse avalanche breakdown

IR= 0.1 mA

voltage

BYV27-50 55 −−V
BYV27-100 110 −−V
BYV27-150 165 −−V
BYV27-200 220 −−V
BYV27-300 330 −−V
BYV27-400 440 −−V
BYV27-500 560 −−V
BYV27-600 675 −−V

I

R

reverse current VR=V

RRMmax

;

−− 5µA

see Fig. 21
V

R=VRRMmax

;

−−150 µA

Tj= 165 °C; see Fig. 21

1997 Nov 24 3

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

rr

C

d

dI

R

-------­dt

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

reverse recovery time when switched from

BYV27-50 to 200 −−25 ns
BYV27-300 to 600 −−50 ns

diode capacitance f = 1 MHz; VR=0;

BYV27-50 to 200 − 100 − pF
BYV27-300 and 400 − 80 − pF
BYV27-500 and 600 − 65 − pF

maximum slope of reverse recovery
current

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W

IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 27

see Figs 22, 23 and 24

when switched from
I

= 1 A to VR≥ 30 V

F

and dIF/dt = −1A/µs;
see Fig. 26

−− 4A/µs

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25.
For more information please refer to the

‘General Part of Handbook SC01’

.

1997 Nov 24 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

GRAPHICAL DATA

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV27-50 to200

a = 1.42; VR=V
Switched mode application.

20 15 10 lead length (mm)

100

; δ = 0.5.

RRMmax

o

T ( C)

tp

MGA849

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV27-300 and 400

a = 1.42; VR=V
Switched mode application.

RRMmax

; δ = 0.5.

BYV27 series

lead length 10 mm

100

o

T ( C)

tp

MLC293

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

3

I

F(AV)

(A)

lead length 10 mm

2

1

0

0 200

BYV27-500 and 600

a = 1.42; VR=V
Switched mode application.

RRMmax

; δ = 0.5.

100

Ttp (°C)

MGK648

Fig.3 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYV27-50 to 200

a = 1.42; VR=V
Device mounted as shown in Fig. 25.
Switched mode application.

RRMmax

; δ = 0.5.

100

o

T ( C)

amb

MGA848

Fig.4 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

1997 Nov 24 5

Fig.5 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).