Philips BYV26E, BYV26D, BYV26G, BYV26B Datasheet

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Philips BYV26E, BYV26D, BYV26G, BYV26B Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D116

BYV26 series

Fast soft-recovery

controlled avalanche rectifiers

Product specification

1996 May 30

Supersedes data of February 1994

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

Fast soft-recovery

BYV26 series

controlled avalanche rectifiers

FEATURES

Glass passivated

High maximum operating temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

Available in ammo-pack.

DESCRIPTION

This package is hermetically sealed

Rugged glass SOD57 package, using

and fatigue free as coefficients of

expansion of all used parts are

a high temperature alloyed

matched.

construction.

 

k

a

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

 

 

 

 

BYV26A

 

200

V

 

BYV26B

 

400

V

 

BYV26C

 

600

V

 

BYV26D

 

800

V

 

BYV26E

 

1000

V

 

BYV26F

 

1200

V

 

BYV26G

 

1400

V

 

 

 

 

 

 

VR

continuous reverse voltage

 

 

 

 

 

BYV26A

 

200

V

 

BYV26B

 

400

V

 

BYV26C

 

600

V

 

BYV26D

 

800

V

 

BYV26E

 

1000

V

 

BYV26F

 

1200

V

 

BYV26G

 

1400

V

 

 

 

 

 

 

IF(AV)

average forward current

Ttp = 85 °C; lead length = 10 mm;

 

 

 

 

BYV26A to E

see Figs 2 and 3;

1.00

A

 

BYV26F and G

averaged over any 20 ms period;

1.05

A

 

see also Figs 10 and 11

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

average forward current

Tamb = 60 °C; PCB mounting (see

 

 

 

 

BYV26A to E

Fig.19); see Figs 4 and 5;

0.65

A

 

BYV26F and G

averaged over any 20 ms period;

0.68

A

 

see also Figs 10 and 11

 

 

 

 

 

 

 

 

 

 

 

IFRM

repetitive peak forward current

Ttp = 85 °C; see Figs 6 and 7

 

 

 

 

BYV26A to E

 

10.0

A

 

BYV26F and G

 

9.6

A

 

 

 

 

 

 

1996 May 30

2

Philips Semiconductors

Product specification

 

 

Fast soft-recovery

BYV26 series

controlled avalanche rectifiers

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

IFRM

repetitive peak forward current

Tamb = 60 °C; see Figs 8 and 9

 

 

 

 

BYV26A to E

 

6.0

A

 

BYV26F and G

 

6.4

A

 

 

 

 

 

 

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave; Tj = Tj max

30

A

 

 

prior to surge; VR = VRRMmax

 

 

 

ERSM

non-repetitive peak reverse

IR = 400 mA; Tj = Tj max prior to

10

mJ

 

avalanche energy

surge; inductive load switched off

 

 

 

 

 

 

 

 

 

Tstg

storage temperature

 

65

+175

°C

Tj

junction temperature

see Figs 12 and 13

65

+175

°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

VF

forward voltage

IF = 1 A; Tj = Tj max;

 

 

 

 

 

BYV26A to E

see Figs 14 and 15

1.3

V

 

BYV26F and G

 

1.3

V

 

 

 

 

 

 

 

VF

forward voltage

IF = 1 A;

 

 

 

 

 

BYV26A to E

see Figs 14 and 15

2.50

V

 

BYV26F and G

 

2.15

V

 

 

 

 

 

 

 

V(BR)R

reverse avalanche breakdown

IR = 0.1 mA

 

 

 

 

 

voltage

 

 

 

 

 

 

BYV26A

 

300

V

 

BYV26B

 

500

V

 

BYV26C

 

700

V

 

BYV26D

 

900

V

 

BYV26E

 

1100

V

 

BYV26F

 

1300

V

 

BYV26G

 

1500

V

 

 

 

 

 

 

 

IR

reverse current

VR = VRRMmax; see Fig.16

5

μA

 

 

VR = VRRMmax;

150

μA

 

 

Tj = 165 °C; see Fig.16

 

 

 

 

trr

reverse recovery time

when switched from

 

 

 

 

 

BYV26A to C

IF = 0.5 A to IR = 1 A;

30

ns

 

BYV26D and E

measured at IR = 0.25 A;

75

ns

 

see Fig.20

 

BYV26F and G

150

ns

 

 

 

 

 

 

 

 

 

Cd

diode capacitance

f = 1 MHz; VR = 0 V;

 

 

 

 

 

BYV26A to C

see Figs 17 and 18

45

pF

 

BYV26D and E

 

40

pF

 

BYV26F and G

 

35

pF

 

 

 

 

 

 

 

1996 May 30

3

Philips Semiconductors

Product specification

 

 

Fast soft-recovery

BYV26 series

controlled avalanche rectifiers

SYMBOL

PARAMETER

CONDITIONS

 

MIN.

 

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dIR

 

 

maximum slope of reverse recovery

when switched from

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

--------

 

 

current

IF = 1 A to VR ³ 30 V and

 

 

 

 

 

 

 

dt

 

 

 

dIF/dt = -1 A/ms;

 

 

-

 

-

 

A/ms

 

 

 

 

BYV26A to C

 

 

 

7

 

 

 

 

see Fig.21

 

 

 

 

 

 

 

BYV26D and E

 

 

-

 

-

6

A/ms

 

 

 

 

 

 

 

 

 

 

 

 

BYV26F and G

 

 

 

-

 

-

5

A/ms

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

 

 

CONDITIONS

 

VALUE

UNIT

 

 

 

 

 

 

 

 

 

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

 

46

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

 

 

 

 

100

K/W

Note

1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’.

1996 May 30

4

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