Philips BYV2100 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV2100

Fast soft-recovery
controlled avalanche rectifier

Product specification
File under Discrete Semiconductors, SC01

1996 Oct 07

Philips Semiconductors Product specification

Fast soft-recovery

BYV2100

controlled avalanche rectifier

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD57 package, using
a high temperature alloyed
construction.

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

ka

2/3 page (Datasheet)

• Available in ammo-pack.

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F(AV)

repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp=80°C; lead length = 10 mm;

averaged over any 20 ms period;
see Fig.2; see also Fig.4

=60°C; PCB mounting

T

amb

(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4

I

FRM

I

FSM

E

T
T

RSM

stg
j

repetitive peak forward current Ttp=80°C; see Fig.6 − 18 A

=60°C; see Fig.7 − 12 A

T

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

storage temperature −65 +175 °C
junction temperature −65 +175 °C

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM047

− 2.0 A

− 1.3 A

− 50 A

prior to

− 20 mJ

1996 Oct 07 2

Philips Semiconductors Product specification

Fast soft-recovery

BYV2100

controlled avalanche rectifier

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 2 A; Tj=T

= 2 A; see Fig.5 −−0.98 V

I

F

reverse avalanche

IR= 0.1 mA 120 −−V

; see Fig.5 −−0.78 V

j max

breakdown voltage
reverse current VR=V

RRMmax

;

−− 5µA

see Fig.8
V

R=VRRMmax

; Tj= 165 °C;

−−150 µA

see Fig.8

reverse recovery time when switched from IF= 0.5 A

−−12.5 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.10

diode capacitance f = 1 MHz; VR= 0 V; see Fig.9 − 135 − pF
maximum slope of reverse

recovery current

when switched from
I

= 1 A to VR≥ 30 V and

F

−− 2A/µs

dIF/dt = −1A/µs; see Fig.11

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the

‘General Part of Handbook SC01’

.

1996 Oct 07 3