Philips BYV160 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV160
Ultra fast low-loss rectifier
Product specification 2000 Feb 01
Ultra fast low-loss rectifier BYV160
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, usinga high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ka
page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage 600 V continuous reverse voltage 600 V average forward current Ttp=60°C; lead length = 10 mm;
2A see Fig.5; averaged over any 20 ms period; see Fig.6
I
FSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=25°C; VR=V
RRMmax
40 A
storage temperature 65 +175 °C junction temperature see Fig.7 65 +175 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
forward voltage IF= 2 A; Tj=T
I
= 2 A; see Fig.2 1.20 V
F
reverse current VR=V
RRMmax
V
R=VRRMmax
; see Fig.2 1.00 V
j max
; see Fig.3 5 µA ; Tj= 150 °C; see Fig.3 150 µA
reverse recovery time when switched from IF= 0.5 A to IR=1A;
50 ns
measured at IR= 0.25 A
2000 Feb 01 2
Ultra fast low-loss rectifier BYV160
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.8. For more information please refer to the
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W thermal resistance from junction to ambient note 1 100 K/W
‘General Part of associated Handbook’
.
2000 Feb 01 3
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