DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV160
Ultra fast low-loss rectifier
Product specification 2000 Feb 01
Philips Semiconductors Product specification
Ultra fast low-loss rectifier BYV160
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, usinga high temperature
alloyed construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ka
page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 600 V
continuous reverse voltage − 600 V
average forward current Ttp=60°C; lead length = 10 mm;
− 2A
see Fig.5;
averaged over any 20 ms period;
see Fig.6
I
FSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=25°C; VR=V
RRMmax
− 40 A
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
forward voltage IF= 2 A; Tj=T
I
= 2 A; see Fig.2 1.20 V
F
reverse current VR=V
RRMmax
V
R=VRRMmax
; see Fig.2 1.00 V
j max
; see Fig.3 5 µA
; Tj= 150 °C; see Fig.3 150 µA
reverse recovery time when switched from IF= 0.5 A to IR=1A;
50 ns
measured at IR= 0.25 A
2000 Feb 01 2
Philips Semiconductors Product specification
Ultra fast low-loss rectifier BYV160
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
‘General Part of associated Handbook’
.
2000 Feb 01 3