Philips byv133f DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV133F series
schottky barrier
GENERAL DESCRIPTION QUICK REFERENCE DATA
Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT
schottky rectifier diodes in a full pack
plastic envelope featuring low BYV133F- 35 40 45
forward voltage drop, absence of V
RRM
stored charge. and guaranteed voltage
reversesurgecapability.Thedevices V
areintendedforuseinswitchedmode I
F
O(AV)
power supplies and high frequency (both diodes conducting)
circuits in general where low
conductionandzeroswitchinglosses
are important.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
Repetitive peak reverse 35 40 45 V
Forward voltage 0.60 0.60 0.60 V
Average output current 20 20 20 A
PIN DESCRIPTION
case
1 anode 1 (a)
2 cathode (k)
a1
1
a2
3
3 anode 2 (a)
k
2
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-35 -40 -45
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
I2tI
I
RRM
I
RSM
T
stg
T
j
Repetitive peak reverse voltage - 35 40 45 V
Crest working reverse voltage - 35 40 45 V
Continuous reverse voltage Ths ≤ 112 ˚C - 35 40 45 V
Average output current (both square wave; δ = 0.5; - 20 A
diodes conducting) Ths ≤ 61 ˚C
RMS output current (both - 20 A
diodes conducting)
Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode Ths ≤ 61 ˚C
Non-repetitive peak forward t = 10 ms - 100 A
current, per diode t = 8.3 ms - 110 A
sinusoidal Tj = 125 ˚C prior
to surge; with reapplied
V
2
t for fusing t = 10 ms - 50 A2s
RRM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 1 A
per diode.
Non-repetitive peak reverse tp = 100 µs-1A
current per diode.
Storage temperature -65 175 ˚C
Operating junction temperature - 150 ˚C
August 1996 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYV133F series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
Thermal resistance junction to per diode - - 6 K/W
heatsink both diodes - - 5 K/W
(with heatsink compound)
Thermal resistance junction to in free air. - 55 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage (per diode) IF = 7 A; Tj = 150˚C - 0.55 0.60 V
IF = 20 A - 0.88 0.94 V
Reverse current (per diode) VR = V
VR = V
RRM
; Tj = 125 ˚C - 4 15 mA
RRM
- 50 100 µA
Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 300 - pF
diode) 125 ˚C
August 1996 2 Rev 1.100
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