Philips BYV1100 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

, halfpage

M3D122

BYV1100

Fast soft-recovery rectifier

Product specification

1998 Dec 03

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYV1100

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Cavity free cylindrical glass package
through Implotec

(1)

technology.

This package is hermetically sealed

and fatigue free as coefficients of
expansion of all used parts are
matched.

(1) Implotec is a trademark of Philips.

• Low leakage current

• Excellent stability

• Available in ammo-pack.

handbook, 4 columns

ak

MAM123

Fig.1 Simplified outline (SOD81) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F(AV)

repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp=55°C; lead length = 10 mm;

− 1.7 A
averaged over any 20 ms period;
see Figs.2 and 4

T

=60°C; printed-circuit board

amb

− 1.0 A
mounting, see Fig.12;
averaged over any 20 ms period;
see Figs.3 and 4

I

FRM

I

FSM

T
T

stg
j

repetitive peak forward current Ttp=55°C; see Fig.6 − 15 A

T

=60°C; see Fig.7 − 9.5 A

amb

non-repetitive peak forward current t = 10 ms half sine wave;

Tj=T
VR=V

prior to surge;

j max

RRMmax

− 15 A

storage temperature −65 +175 °C
junction temperature −65 +175 °C

1998 Dec 03 2

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYV1100

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 1 A; Tj=T

I

= 1 A; see Fig.5 −−0.96 V

F

reverse avalanche

IR= 0.1 mA 120 −−V

; see Fig.5 −−0.735 V

j max

breakdown voltage
reverse current VR=V

V

R=VRRMmax

; see Fig.8 −− 5µA

RRMmax

; Tj= 165 °C;

−−150 µA

see Fig.8

reverse recovery time when switched from IF= 0.5 A

−− 10 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.10

diode capacitance f = 1 MHz; VR= 0; see Fig.9 − 70 − pF
maximum slope of reverse

recovery current

when switched from
I

= 1 A to VR≥ 30 V and

F

−− 2A/µs

dIF/dt = −1A/µs; see Fig.11

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the

‘General Part of associated Handbook’

.

1998 Dec 03 3

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYV1100

GRAPHICAL DATA

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

Switched mode application.
a =1.42; δ = 0.5; VR=V

40 80 120 160

RRMmax

.

MGR565

Ttp (°C)

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

Switched mode application.
a = 1.42; δ = 0.5; VR=V
Device mounted as shown in Fig.12.

40 80 120 160

.

RRMmax

T

amb

Fig.3 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

MGR564

(°C)

I

F(AV)

MBK899

1.57

1.42

2.0

handbook, halfpage

P

(W)

1.6

1.2

0.8

0.4

0

0 2.0

a=I

F(RMS)/IF(AV)

a = 3 2.5 2

0.4 0.8 1.2 1.6

; δ = 0.5; VR=V

RRMmax

.

Fig.4 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.

(A)

20

handbook, halfpage

I

F

(A)

16

12

8

4

0

012 4

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

MGR563

3

VF (V)

Fig.5 Maximum forward voltage as a function of

forward current.

1998 Dec 03 4