Philips BYV10-40 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
page
M3D119
BYV10 series
Schottky barrier diodes
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 13
Philips Semiconductors Product specification
Schottky barrier diodes BYV10 series
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed leaded glass
DESCRIPTION
The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in
planar technology, and encapsulated in SOD81 hermetically sealed glass
packages incorporating Implotec
(1) Implotec is a trademark of Philips.
TM(1)
technology.
package.
APPLICATIONS
handbook, 4 columns
ak
• Low power, switched-mode power
supplies
• Rectifying
Fig.1 Simplified outline (SOD81) and symbol.
MAM218
• Polarity protection.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
I
F(AV)
T
stg
T
j
repetitive peak reverse voltage
BYV10-20
BYV10-30
BYV10-40
average forward current
storage temperature
junction temperature
note 1
−
−
−
−
−65
−
20 V
30 V
40 V
1A
+150 °C
125 °C
Note
1. Refer to SOD81 standard mounting conditions.
1996 May 13 2
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