Philips BYV10-30, BYV10-20 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

page

M3D119

BYV10 series

Schottky barrier diodes

Product specification
Supersedes data of April 1992

1996 May 13

Philips Semiconductors Product specification

Schottky barrier diodes BYV10 series

FEATURES

• Low switching losses

• Fast recovery time

• Guard ring protected

• Hermetically sealed leaded glass

DESCRIPTION

The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in
planar technology, and encapsulated in SOD81 hermetically sealed glass
packages incorporating Implotec

(1) Implotec is a trademark of Philips.

TM(1)

technology.

package.

APPLICATIONS

handbook, 4 columns

ak

• Low power, switched-mode power
supplies

• Rectifying

Fig.1 Simplified outline (SOD81) and symbol.

MAM218

• Polarity protection.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

I

F(AV)

T

stg

T

j

repetitive peak reverse voltage

BYV10-20
BYV10-30
BYV10-40

average forward current
storage temperature
junction temperature

note 1

−

−

−

−

−65

−

20 V
30 V
40 V
1A
+150 °C
125 °C

Note

1. Refer to SOD81 standard mounting conditions.

1996 May 13 2