Philips BYT79-500, BYT79-400 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYT79 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 300 V/ 400 V/ 500 V
R
• Fast switching
• Soft recovery characteristic V
• High thermal cycling performance
• Low thermal resistance I
k a
12
F(AV)
≤ 1.05 V
F
= 14 A
trr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in high frequency switched mode 1 cathode
power supplies.
2 anode
TheBYT79seriesissuppliedinthe
conventional leaded SOD59 tab cathode
(TO220AC) package.
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F(AV)
I
FSM
T
T
RRM
R
stg
j
Peak repetitive reverse voltage - 300 400 500 V
Continuous reverse voltage Tmb ≤ 147˚C - 300 400 500 V
Average forward current
1
square wave; δ = 0.5; - 14 A
Tmb ≤ 117 ˚C
Non-repetitive peak forward t = 10 ms - 130 A
current. t = 8.3 ms - 143 A
sinusoidal; with reapplied
V
RRM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
BYT79 -300 -400 -500
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Neglecting switching and reverse current losses
September 1998 1 Rev 1.300
Thermal resistance junction to - - 2.0 K/W
mounting base
Thermal resistance junction to in free air. - 60 - K/W
ambient
Philips Semiconductors Product specification
Rectifier diodes BYT79 series
ultrafast
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
Forward voltage IF = 15 A; Tj = 150˚C - 0.90 1.05 V
IF = 30 A - 1.17 1.38 V
Reverse current VR = V
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 50 60 nC
VR = V
RRM
; Tj = 100 ˚C - 0.2 0.8 mA
RRM
- 5.0 50 µA
dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.2 A
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
PF / W
25
Vo = 0.9075 V
Rs = 0.0095 Ohms
20
15
10
5
0
0 5 10 15 20 25
0.1
Fig.3. Maximum forward dissipation PF = f(I
I
rrm
dI
F
dt
t
rr
time
Q
s
10%
100%
rrm
I
F
I
R
Fig.1. Definition of trr, Qs and I
square wave where I
I
F
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
PF / W
20
Vo = 0.9075 V
Rs = 0.0095 Ohms
15
10
5
0
0 5 10 15
Fig.4. Maximum forward dissipation PF = f(I
BYT79
0.5
0.2
I
IF(AV) / A
F(AV)
BYT79
2.2
2.8
4
IF(AV) / A
=I
p
t
F(RMS)
1.9
D = 1.0
T
Tmb(max) / C
p
t
D =
T
t
x √D.
Tmb(max) / C
a = 1.57
F(AV)
110
120
130
140
150
F(AV)
100
110
120
130
140
150
);
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998 2 Rev 1.300
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