Philips BYT28-400, BYT28-300 Datasheet

Philips Semiconductors Product specification

Dual rectifier diodes BYT28 series
ultrafast

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop V

• Fast switching

• Soft recovery characteristic V

• High thermal cycling performance

a1

13

a2

• Low thermal resistance I

k

2

= 300 V/ 400 V/ 500 V

R

≤ 1.05 V

F

= 10 A

O(AV)

trr ≤ 60 ns

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

Dual, common cathode, ultra-fast, PIN DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high 1 cathode
frequency switched mode power
supplies. 2 anode

TheBYT28series is supplied in the tab cathode
conventional leaded SOT78
(TO220AB) package.

tab

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

I

O(AV)

I

FSM

T
T

RRM
R

stg
j

Repetitive peak reverse voltage - 300 400 500 V
Continuous reverse voltage Tmb ≤ 147˚C - 300 400 500 V

Average rectified output current square wave; δ = 0.5; - 10 A
(both diodes conducting)

1

Tmb ≤ 115 ˚C
Non-repetitive peak forward t = 10 ms - 50 A
current per diode. t = 8.3 ms - 55 A

sinusoidal; with reapplied

V

RRM(max)

Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C

BYT28 -300 -400 -500

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

1 Neglecting switching and reverse current losses.

October 1998 1 Rev 1.400

Thermal resistance junction to per diode - - 4.5 K/W
heatsink both diodes conducting - - 3.0 K/W
Thermal resistance junction to in free air. - 60 - K/W
ambient

Philips Semiconductors Product specification

Dual rectifier diodes BYT28 series
ultrafast

ELECTRICAL CHARACTERISTICS

characteristics are per diode at Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

Q

s

t

rr

I

rrm

V

fr

Forward voltage IF = 5 A; Tj = 150˚C - 0.95 1.05 V

IF = 10 A - 1.30 1.40 V
Reverse current VR = V

Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 50 60 nC

VR = V

RRM

; Tj = 100 ˚C - 10 200 µA

RRM

- 2.0 10 µA

dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns

dIF/dt = 100 A/µs
Peak reverse recovery current IF = 5 A to VR ≥ 30 V; - 2.0 3.0 A

dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs - 2.5 - V

I

F

dI

F

dt

t

rr

time

Q

s

I

R

I

rrm

10%

Fig.1. Definition of trr, Qs and I

100%

rrm

PF / W

9

Vo = 0.945 V
Rs = 0.021 Ohms

8
7
6
5
4
3
2
1
0

012345678

0.1

Fig.3. Maximum forward dissipation PF = f(I

BYT28

0.2

I

IF(AV) / A

diode; square wave where I

I

F

time

V

F

PF / W

6

Vo = 0.945 V
Rs = 0.021 Ohms

5

4

3

2

BYT28

2.2

2.8

4

0.5

F(AV)

Tmb(max) / C

t

p

T

=I

F(RMS)

Tmb(max) / C

1.9

D = 1.0

D =

a = 1.57

t

p

T

t

F(AV)

x √D.

123

127.5

132

136.5

141

109.5
114

118.5
123

127.5
132

136.5
141

145.5
150

) per

Fig.2. Definition of V

V

fr

V

F

time

fr

1

0

012345

IF(AV) / A

Fig.4. Maximum forward dissipation PF = f(I

F(AV)

145.5

150

) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

F(AV)

.

October 1998 2 Rev 1.400