Philips BY559-1500 Datasheet

Philips Semiconductors Objective specification
Rectifier diode BY559-1500 fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Low forward recovery voltage
• Fast switching VF 1.2 V
• Soft recovery characteristic
• High thermal cycling performance Vfr 14 V
• Low thermal resistance tfr 250 ns
I
F(AV)
= 10 A
I
FSM
100 A
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Glass-passivated double diffused PIN DESCRIPTION rectifierdiode featuringfastforward recovery and low forward recovery 1 cathode voltage. The device is intended for usein multi-sync monitorhorizontal 2 anode deflection circuits with maximum scan rates from82 kHz to120 kHz. tab cathode
The BY559 series is supplied in the conventional leaded SOD59 (TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
Peak repetitive reverse voltage - 1500 V
V
RWM
Crest working reverse voltage - 1300 V
I
FWM
Peak working forward current f = 120 kHz; - 10 A
I
FRM
Peak repetitive forward current t = 100 µs - 150 A
I
FSM
Peak non-repetitive forward t = 10 ms - 180 A current t = 8.3 ms - 200 A
sinusoidal; Tj = 150 ˚C prior to surge; with reapplied V
RWM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.0 K/W mounting base
R
th j-a
Thermal resistance junction to in free air - 60 - K/W ambient
k a 12
1
tab
2
September 1998 1 Rev 1.100
Philips Semiconductors Objective specification
Rectifier diode BY559-1500 fast, high-voltage
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 10 A - 1.0 1.25 V
IF = 10 A; Tj = 125 ˚C - 0.79 0.9 V
I
R
Reverse current VR = V
RWMmax
- - 0.5 mA
VR = V
RWMmax
; Tj = 125 ˚C - - 2.0 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
fr
Forward recovery voltage IF = 10 A; dIF/dt = 50 A/µs-711V
t
fr
Forward recovery time IF = 10 A; dIF/dt = 50 A/µs; VF = 5 V - 250 350 ns
IF = 10 A; dIF/dt = 50 A/µs; VF = 2 V - 450 600 ns
t
rr
Reverse recovery time IF = 1 A; -dIF/dt = 50 A/µs; VR 30 V - 0.75 1.0 µs
Q
s
Reverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs; VR 30 V - 4.0 5.0 µC
September 1998 2 Rev 1.100
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