Philips BY558, BY578 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D333
BY558; BY578
Damper diodes
Product specification
File under Discrete Semiconductors, SC01
1998 Jun 25
Philips Semiconductors Product specification
Damper diodes BY558; BY578
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
• Excellent stability
• Also available with preformed leads
for easy insertion
• Designed to withstand transients
up to 1700 V.
handbook, halfpage
ka
MAM384
APPLICATIONS
• For use in multi-sync monitor
Fig.1 Simplified outline (SOD115) and symbol.
horizontal deflection circuits
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
non-repetitive peak reverse voltage
BY558 − 1500 V
BY578 − 1700 V
V
RRM
repetitive peak reverse voltage
BY558 − 1500 V
BY578 − 1700 V
V
R
I
F(AV)
continuous reverse voltage − 1400 V
average forward current Ttp=65°C; see Fig.2;
− 2.5 A
PCB mounting; averaged over any
20 ms period; see Fig.4
I
FRM
I
FSM
T
T
stg
j
repetitive peak forward current − 12 A
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
VR=V
prior to surge;
j max
RRMmax
− 80 A
storage temperature −65 +175 °C
junction temperature −65 +150 °C
1998 Jun 25 2
Philips Semiconductors Product specification
Damper diodes BY558; BY578
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
I
t
V
t
F
R
rr
FRM
fr
forward voltage IF= 5 A; Tj=T
I
= 5 A; see Fig.3 − 1.7 V
F
reverse current VR=V
RRMmax
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.6
forward recovery voltage IF= 5 A; dIF/dt = 50 A/µs; see Fig.5 15 20 V
forward recovery time IF= 5 A; dIF/dt = 50 A/µs; VF=5V;
see Fig.5
I
= 5 A; dIF/dt = 50 A/µs; VF=2V;
F
see Fig.5
; see Fig.3 − 1.3 V
j max
; Tj= 150 °C − 175 µA
− 250 ns
260 350 ns
700 − ns
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 20 K/W
thermal resistance from junction to ambient note 1 70 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the
‘General Part of Handbook SC01’
.
1998 Jun 25 3
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