Philips BY527 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BY527
Controlled avalanche rectifier
Product specification
Supersedes data of April 1992
1996 Jun 11
Philips Semiconductors Product specification
Controlled avalanche rectifier BY527
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
ka
2/3 page (Datasheet)
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
V
R
I
F(AV)
repetitive peak reverse voltage − 1250 V
crest working reverse voltage − 800 V
continuous reverse voltage − 800 V
average forward current Ttp=45°C;
− 2.0 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
=80°C; PCB mounting
T
amb
− 0.8 A
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
I
FSM
E
T
T
RSM
stg
j
non-repetitive peak forward current t = 10 ms half sinewave − 50 A
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 20
mJ
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 Jun 11 2
Philips Semiconductors Product specification
Controlled avalanche rectifier BY527
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
F
(BR)R
forward voltage IF=1A; Tj=T
reverse avalanche
breakdown voltage
I
R
t
rr
C
d
reverse current VR=V
reverse recovery time when switched from IF= 0.5 A to
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 50 −
THERMAL CHARACTERISTICS
I
= 1 A; see Fig.6 −− 1.0 V
F
IR= 0.1 mA 1250 −−V
RWMmax
V
R=VRWMmax
IR= 1 A; measured at IR= 0.25 A;
see Fig.10
; see Fig.6 −− 0.8 V
j max
; see Fig.7 −− 1µA
; Tj= 165 °C; see Fig.7 −−150 µA
− 3 −
µs
pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Jun 11 3
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