Philips BY505 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D189
BY505
High-voltage soft-recovery rectifier
Product specification Supersedes data of May 1996 File under Discrete Semiconductors, SC01
1996 Sep 26
Philips Semiconductors Product specification
High-voltage soft-recovery rectifier BY505
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.
The package is designed to be used in an insulating medium such as resin, oil or SF6 gas.
Excellent stability
Soft-recovery switching
characteristics
Compact construction.
handbook, halfpage
k
a
MAM162
APPLICATIONS
High-voltage applications for: – High frequencies
The cathode lead is marked by a black band.
Fig.1 Simplified outline (SOD61A) and symbol.
– Switching applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RW
I
F(AV)
non-repetitive peak reverse voltage 2200 V repetitive peak reverse voltage 2200 V working reverse voltage 2000 V average forward current averaged over any 20 ms period;
85 mA Ttp=25°C; lead length = 10 mm; see Fig.2; see also Fig.4
averaged over any 20 ms period; T
=60°C; PCB mounting
amb
50 mA
(see Fig.6); see Fig.3; see also Fig.4
I
FRM
I
FSM
T
stg
T
j
repetitive peak forward current 800 mA non-repetitive peak forward current t 10 ms; half sinewave;
Tj=T VR=V
prior to surge;
j max
RWmax
5A
storage temperature 65 +120 °C junction temperature 65 +120 °C
1996 Sep 26 2
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