Philips BY479X-1700 Datasheet
Philips Semiconductors Product specification
Damper diode BY479X-1700
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1700 V
• Low Forward recovery voltage
• Fast switching VF ≤ 1.2 V
• Soft recovery characteristic
• High thermal cycling performance Vfr ≤ 19 V
• Isolated mounting tab
GENERAL DESCRIPTION PINNING SOD113
k a
12
I
I
= 10 A
FWM
≤ 100 A
FRM
tfr ≤ 300 ns
Glass-passivated double diffused PIN DESCRIPTION
rectifierdiodefeaturingfast forward
case
recovery and low forward recovery 1 cathode
voltage. The device is intended for
usein multi-sync monitordeflection 2 anode
circuits up to 64kHz. The device is
designed to withstand transient tab isolated
reverse voltages up to 1700V.
The BY479X series is supplied in
12
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
FWM
I
FRM
I
FSM
T
T
RSM
RRM
RWM
stg
j
Peak non-repetitive reverse - 1700 V
voltage during flash-over of
picture tube
Peak repetitive reverse voltage t = 3.5 µs; f = 64kHz - 1700 V
Crest working reverse voltage - 1300 V
Peak working forward current1f = 64kHz; Ths ≤ 126 ˚C - 10 A
Peak repetitive forward current t = 100 µs - 100 A
Peak non-repetitive forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied V
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 Including worst case forward recovery losses, see fig:5.
September 1998 1 Rev 1.200
Philips Semiconductors Product specification
Damper diode BY479X-1700
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 5.9 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
Forward voltage IF = 6.5 A - 0.95 1.3 V
IF = 6.5 A; Tj = 125 ˚C - 0.85 1.2 V
Reverse current VR = V
VR = V
RWMmax
; Tj = 125 ˚C - - 1.0 mA
RWMmax
- - 0.25 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
fr
t
fr
t
rr
Q
s
Forward recovery voltage IF = 6.5 A; dIF/dt = 50 A/µs - 12 19 V
Forward recovery time IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V - 200 300 ns
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V - 400 - ns
Reverse recovery time IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V - 250 350 ns
Reverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V - 2.0 3.0 µC
September 1998 2 Rev 1.200
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