Philips by459f 1500 DATASHEETS
Philips Semiconductors Product specification
Rectifier diode BY459F-1500
fast, high-voltage
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT
rectifier diode in a full pack plastic
envelope, featuring fast forward V
recovery and low forward recovery V
voltage. The device is intended for I
use in multi-sync monitor horizontal I
deflection circuits. t
FWM
FRM
fr
V
RRM
F
fr
PINNING - SOD100 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
Repetitive peak reverse voltage 1500 V
Forward voltage 1.2 V
Working peak forward current 10 A
Repetitive peak forward current 100 A
Forward recovery time 250 ns
Forward recovery voltage 14 V
case
2 anode
k a
1
2
case isolated
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
Non-repetitive peak reverse - 1500 V
voltage during flash-over of
picture tube
V
V
I
FWM
I
FRM
I
FSM
RRM
RWM
Repetitive peak reverse voltage t = 6 µs; f = 82kHz - 1500 V
Crest working reverse voltage - 1300 V
Working peak forward current1f = 82kHz; Ths ≤ 127 ˚C - 10 A
Repetitive peak forward current t = 100 µs - 100 A
Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; Tj = 150 ˚C prior to
T
stg
T
j
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
surge; with reapplied V
RWM(max)
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree - 1500 V
both terminals to external
heatsink
Capacitance from cathode to f = 1 MHz - 12 - pF
external heatsink
1 Including worst case forward recovery losses, see fig:5.
August 1996 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diode BY459F-1500
fast, high-voltage
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
fr
tfrForward recovery time IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V - 170 250 ns
t
rr
Q
s
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 5.9 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
Forward voltage IF = 6.5 A - 0.95 1.3 V
IF = 6.5 A; Tj = 125 ˚C - 0.85 1.2 V
Reverse current VR = V
VR = V
RWMmax
; Tj = 125 ˚C - - 1.0 mA
RWMmax
- - 0.25 mA
Forward recovery voltage IF = 6.5 A; dIF/dt = 50 A/µs-814V
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V - 350 - ns
Reverse recovery time IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V - 250 350 ns
Reverse recovery charge IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V - 2.0 3.0 µC
August 1996 2 Rev 1.200
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