Philips BY359DX-1500S Datasheet
Philips Semiconductors Objective specification
Rectifier diode BY359DX-1500
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.5 V
• High thermal cycling performance
• Isolated mounting tab I
F(AV)
= 10 A
I
FSM
≤ 60 A
trr ≤ 600 ns
GENERAL DESCRIPTION PINNING SOD117
Glass-passivated double diffused PIN DESCRIPTION
rectifierdiode featuring low forward
voltage drop, fast reverse recovery 1 cathode
and soft recovery characteristic.
Thedeviceisintendedforuse in TV 2 anode
receivers,series resonantswitched
mode power supplies and other tab isolated
high voltage circuits.
The BY359DX series is supplied in
the conventional leaded SOD117
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
Peak non-repetitive reverse - 1500 V
voltage
V
RRM
Peak repetitive reverse voltage - 1500 V
V
RWM
Crest working reverse voltage - 1300 V
I
F(AV)
Average forward current sinusoidal; a = 1.57; Ths = tbf - 10 A
I
F(RMS)
RMS forward current - 20 A
I
FRM
Peak repetitive forward current sinusoidal; a = 1.57 - 60 A
I
FSM
Peak non-repetitive forward t = 10 ms - 60 A
current t = 8.3 ms - 66 A
half sine wave; Tj = 150 ˚C prior to
surge; with reapplied V
RWM(max)
I2tI
2
t for fusing t = 10 ms - 18 A2s
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
k a
12
case
12
April 1998 1 Rev 1.000
Philips Semiconductors Objective specification
Rectifier diode BY359DX-1500
fast, high-voltage
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - tbf K/W
heatsink without heatsink compound - - tbf K/W
R
th j-a
Thermal resistance junction to in free air. - tbf - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 20 A - 1.3 1.8 V
IF = 10 A; Tj = 150˚C - 1.00 1.5 V
I
R
Reverse current VR = 1300 V - 10 100 µA
VR = 1300 V; Tj = 100 ˚C - 50 300 µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
Reverse recovery time IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 0.47 0.6 µs
Q
s
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 1.6 2.0 µC
V
fr
Peak forward recovery voltage IF = 10 A; dIF/dt = 30 A/µs - 11.0 - V
April 1998 2 Rev 1.000
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