Philips BY359DX-1500 Datasheet
Philips Semiconductors Objective specification
Rectifier diode BY359DX-1500
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.5 V
• High thermal cycling performance
• Isolated mounting tab I
GENERAL DESCRIPTION PINNING SOD117
k a
12
= 10 A
F(AV)
I
≤ 60 A
FSM
trr ≤ 600 ns
Glass-passivated double diffused PIN DESCRIPTION
case
rectifierdiode featuring low forward
voltage drop, fast reverse recovery 1 cathode
and soft recovery characteristic.
Thedeviceisintendedforuse in TV 2 anode
receivers,series resonantswitched
mode power supplies and other tab isolated
high voltage circuits.
The BY359DX series is supplied in
12
the conventional leaded SOD117
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2tI
T
stg
T
j
Peak non-repetitive reverse - 1500 V
voltage
Peak repetitive reverse voltage - 1500 V
Crest working reverse voltage - 1300 V
Average forward current sinusoidal; a = 1.57; Ths = tbf - 10 A
RMS forward current - 20 A
Peak repetitive forward current sinusoidal; a = 1.57 - 60 A
Peak non-repetitive forward t = 10 ms - 60 A
current t = 8.3 ms - 66 A
half sine wave; Tj = 150 ˚C prior to
2
t for fusing t = 10 ms - 18 A2s
surge; with reapplied V
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
April 1998 1 Rev 1.000
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
Philips Semiconductors Objective specification
Rectifier diode BY359DX-1500
fast, high-voltage
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
Q
s
V
fr
Thermal resistance junction to with heatsink compound - - tbf K/W
heatsink without heatsink compound - - tbf K/W
Thermal resistance junction to in free air. - tbf - K/W
ambient
Forward voltage IF = 20 A - 1.3 1.8 V
IF = 10 A; Tj = 150˚C - 1.00 1.5 V
Reverse current VR = 1300 V - 10 100 µA
VR = 1300 V; Tj = 100 ˚C - 50 300 µA
Reverse recovery time IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 0.47 0.6 µs
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 1.6 2.0 µC
Peak forward recovery voltage IF = 10 A; dIF/dt = 30 A/µs - 11.0 - V
April 1998 2 Rev 1.000
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